Effect of Conduction Band Offset on Gate Leakage Current at SiO2/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy
SSDM2018. 2018.
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作成時刻: 2018-08-08 15:53:11 +0900更新時刻: 2018-08-08 15:53:11 +0900