HOME > Presentation > DetailEffect of Conduction Band Offset on Gate Leakage Current at SiO2/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopyインダリ エフィ ダウィ, 山下 良之, Ryu Hasunuma, Kikuo Yamabe. SSDM2018. 2018.NIMS author(s)INDARI, Efi DwiYAMASHITA, YoshiyukiFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2018-08-08 15:53:11 +0900 Updated at :2018-08-08 15:53:11 +0900