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Effect of Conduction Band Offset on Gate Leakage Current at SiO2/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy

インダリ エフィ ダウィ, 山下 良之, Ryu Hasunuma, Kikuo Yamabe.
SSDM2018. 2018.

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    Created at :2018-08-08 15:53:11 +0900 Updated at :2018-08-08 15:53:11 +0900

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