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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年05月02日

1767件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Tomohiro Ichinose, Tatsuya Yamamoto, Jun Uzuhashi, Takayuki Nozaki, Tadakatsu Ohkubo, Kay Yakushiji, Shingo Tamaru, Kazuhiro Hono, Shinji Yuasa. Improvement in perpendicular magnetic anisotropy and its voltage control efficiency in CoFeB/MgO tunnel junctions with Ta/Mo layered adhesion structures. Journal of Applied Physics. 131 [21] (2022) 213901 10.1063/5.0088530
  • Emi Kano, Keita Kataoka, Jun Uzuhashi, Kenta Chokawa, Hideki Sakurai, Akira Uedono, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Yuta Itoh, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Jun Suda, Tetsu Kachi, Nobuyuki Ikarashi. Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation. Journal of Applied Physics. 132 [6] (2022) 065703 10.1063/5.0097866 Open Access
  • Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing. Journal of Applied Physics. 131 [18] (2022) 185701 10.1063/5.0087248 Open Access
  • Kaoru Hisama, Yanlin Gao, Mina Maruyama, Ryo Kitaura, Susumu Okada. Continuous Fermi level tuning of Nb-doped WSe2under an external electric field. Japanese Journal of Applied Physics. 61 [1] (2022) 015002 10.35848/1347-4065/ac3726
  • M. Hiraishi, H. Okabe, A. Koda, R. Kadono, H. Hosono. Ambipolarity of diluted hydrogen in wide-gap oxides revealed by muon study. Journal of Applied Physics. 132 [10] (2022) 10.1063/5.0102204 Open Access
  • Masaya Morita, Keiji Ishibashi, Kenichiro Takahashi, Shigenori Ueda, Jun Chen, Kota Tatejima, Toyohiro Chikyow, Atsushi Ogura, Takahiro Nagata. Effect of reactive gas condition on nonpolar AlN film growth on MnS/Si (100) by reactive DC sputtering. Japanese Journal of Applied Physics. 61 [SC] (2022) SC1071 10.35848/1347-4065/ac4ad7
  • S. Anghel, A. V. Poshakinskiy, K. Schiller, G. Yusa, T. Mano, T. Noda, M. Betz. Spin helices in GaAs quantum wells: Interplay of electron density, spin diffusion, and spin lifetime. Journal of Applied Physics. 132 [5] (2022) 054301 10.1063/5.0097426
  • Taketo Aihara, Ruoxi Wang, Xu Yang, Yoshiki Sakuma, Ayako Omura Okano, Michio Ikezawa. Observation of strain relaxing in nanoscale WS2 monolayers grown on SiO2/Si by organic solvent treatment. Japanese Journal of Applied Physics. 61 [7] (2022) 071003 10.35848/1347-4065/ac78af
  • B. Da, X. Liu, L. H. Yang, J. M. Gong, Z. J. Ding, H. Shinotsuka, J. W. Liu, H. Yoshikawa, S. Tanuma. Evaluation of dielectric function models for calculation of electron inelastic mean free path. Journal of Applied Physics. 131 [17] (2022) 10.1063/5.0085984 Open Access
  • T. Wada, W. Namiki, T. Tsuchiya, D. Kan, Y. Shimakawa, T. Higuchi, K. Terabe. In situ manipulation of perpendicular magnetic anisotropy in half-metallic NiCo2O4 thin film by proton insertion. Japanese Journal of Applied Physics. 61 [SM] (2022) SM1002 10.35848/1347-4065/ac594f
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