1419件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ) | |
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S. Anghel, A. V. Poshakinskiy, K. Schiller, G. Yusa, T. Mano, T. Noda, M. Betz. Spin helices in GaAs quantum wells: Interplay of electron density, spin diffusion, and spin lifetime. Journal of Applied Physics. 132 [5] (2022) 054301 10.1063/5.0097426 | |
Taketo Aihara, Ruoxi Wang, Xu Yang, Yoshiki Sakuma, Ayako Omura Okano, Michio Ikezawa. Observation of strain relaxing in nanoscale WS2 monolayers grown on SiO2/Si by organic solvent treatment. Japanese Journal of Applied Physics. 61 [7] (2022) 071003 10.35848/1347-4065/ac78af | |
B. Da, X. Liu, L. H. Yang, J. M. Gong, Z. J. Ding, H. Shinotsuka, J. W. Liu, H. Yoshikawa, S. Tanuma. Evaluation of dielectric function models for calculation of electron inelastic mean free path. Journal of Applied Physics. 131 [17] (2022) 175301 10.1063/5.0085984 | |
T. Wada, W. Namiki, T. Tsuchiya, D. Kan, Y. Shimakawa, T. Higuchi, K. Terabe. In situ manipulation of perpendicular magnetic anisotropy in half-metallic NiCo2O4 thin film by proton insertion. Japanese Journal of Applied Physics. 61 [SM] (2022) SM1002 10.35848/1347-4065/ac594f | |
Kazuya Terabe, Takashi Tsuchiya, Tohru Tsuruoka. Solid state ionics for the development of artificial intelligence components. Japanese Journal of Applied Physics. 61 [SM] (2022) SM0803 10.35848/1347-4065/ac64e5 | |
Yoshiyuki Yamashita, Jun Nara, Efi Dwi Indari, Takahiro Yamasaki, Takahisa Ohno, Ryu Hasunuma. Experimental and theoretical studies on atomic structures of the interface states at SiO2/4H-SiC(0001) interface. Journal of Applied Physics. 131 [21] (2022) 215303 10.1063/5.0093267 | |
Alexandra Papadogianni, Takahiro Nagata, Oliver Bierwagen. The electrical conductivity of cubic (In1−x
Ga
x
)2O3 films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer. Japanese Journal of Applied Physics. 61 [4] (2022) 045502 10.35848/1347-4065/ac4ec7 | |
Takuya Kawazu. Effects of In composition on the surface morphology of self-assembled In
x
Ga1−x
Sb/GaAs quantum dots. Japanese Journal of Applied Physics. 61 [6] (2022) 065503 10.35848/1347-4065/ac691f | |
Kazuhito Tsukagoshi, Yukiya Umeta, Hiroshi Suga. C60 nanowire two-state resistance switching: fabrication and electrical characterizations. Japanese Journal of Applied Physics. 61 [SD] (2022) SD0804 10.35848/1347-4065/ac4e49 | |
T. Suemasu, K. O. Hara, H. Udono, M. Imai. Silicon meets group-II metals in energy and electronic applications—How to handle reactive sources for high-quality films and bulk crystals. Journal of Applied Physics. 131 [19] (2022) 191101 10.1063/5.0092080 | |