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分野別にみる

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2022年07月03日

795件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Takeshi Yasuda, Kenji Sakamoto. Photovoltaic properties of planar organic solar cells using perylenetetracarboxylic diimide with phenylethyl derivatives. Japanese Journal of Applied Physics. 59 [SD] (2020) SDDD01 10.7567/1347-4065/ab54fe
  • Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe. Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. Japanese Journal of Applied Physics. 59 [2] (2020) 025512 10.35848/1347-4065/ab6faf
  • Qiao Li, Xuefu Zhang, Da Jiang, Yoshitaka Shingaya, Daiju Tsuya, Tomonobu Nakayama. Raman intensity oscillation of graphene over SiO2/Si micro-cavity. Japanese Journal of Applied Physics. 59 [2] (2020) 028001 10.35848/1347-4065/ab67e0
  • Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese Journal of Applied Physics. 58 [SC] (2019) SCCD25 10.7567/1347-4065/ab106c
  • Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates. Japanese Journal of Applied Physics. 58 [SC] (2019) SCCB24 10.7567/1347-4065/ab1250
  • Takuya Iwasaki, Taku Kato, Hirohito Ito, Kenji WATANABE, Takashi Taniguchi, Yutaka Wakayama, Tsuyoshi Hatano, Satoshi Moriyama. Fabrication and characterization of quantum dot devices based on tetralayer graphene/hexagonal boron nitride heterostructures. Japanese Journal of Applied Physics. (2019) 10.7567/1347-4065/ab65a8
  • Tin Phan Nguy, Ryoma Hayakawa, Volkan Kilinc, Matthieu Petit, Jean-Manuel Raimundo, Anne Charrier, Yutaka Wakayama. Stable operation of water-gated organic field-effect transistor depending on channel flatness, electrode metals and surface treatment. Japanese Journal of Applied Physics. 58 [SD] (2019) SDDH02 10.7567/1347-4065/ab09d2
  • Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma. Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor. Japanese Journal of Applied Physics. 58 [SI] (2019) SIIB05 10.7567/1347-4065/ab0c76
  • Katsunori Ueno, Takahiro Tadokoro, Yuichiro Ueno, Keisuke Sasaki, Satoshi Koizumi, Akiyoshi Chayahara, Yoshiaki Mokuno, Shintaro Hirano, Junichi H. Kaneko. Heat and radiation resistances of diamond semiconductor in gamma-ray detection. Japanese Journal of Applied Physics. 58 [10] (2019) 106509 10.7567/1347-4065/ab4044
  • Kei Terayama, Koji Tsuda, Ryo Tamura. Efficient recommendation tool of materials by an executable file based on machine learning. Japanese Journal of Applied Physics. 58 [9] (2019) 098001 10.7567/1347-4065/ab349b
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