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Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111)Pt/TiO x /SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties

Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo.

NIMS著者


Materials Data Repository (MDR)上の本文・データセット


    作成時刻: 2021-04-20 03:00:19 +0900更新時刻: 2024-05-03 08:48:32 +0900

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