Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111)Pt/TiO
 x
 /SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties

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Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo.

作成時刻: 2021-04-20 03:00:19 +0900更新時刻: 2024-04-02 04:12:40 +0900