Preparation of 1 μm thick Y-doped HfO<sub>2</sub> ferroelectric films on (111)Pt/TiO <sub>x</sub> /SiO<sub>2</sub>/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Preparation of 1 μm thick Y-doped HfO₂ ferroelectric films on (111)Pt/TiO _x /SiO₂/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties

Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo.

Japanese Journal of Applied Physics 60 [3] 031009. 2021.

https://doi.org/10.35848/1347-4065/abe72e

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清水荘雄

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作成時刻: 2021-04-20 03:00:19 +0900更新時刻: 2025-01-16 05:54:12 +0900

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