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Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111)Pt/TiO x /SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties

Author(s)Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo.
Journal titleJapanese Journal of Applied Physics 60 [3] 031009
ISSN: 13474065, 00214922
ESI category: PHYSICS
PublisherIOP Publishing
Year of publication2021
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