HOME > Article > DetailPreparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111)Pt/TiO x /SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric propertiesReijiro Shimura, Takanori Mimura, Akinori Tateyama, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo. Japanese Journal of Applied Physics 60 [3] 031009. 2021.https://doi.org/10.35848/1347-4065/abe72e NIMS author(s)SHIMIZU, TakaoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-04-20 03:00:19 +0900Updated at: 2024-04-02 04:12:40 +0900