Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Hiroshi Amano.

Japanese Journal of Applied Physics 60 [SB] SBBD03. 2021.

https://doi.org/10.35848/1347-4065/abd538

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作成時刻: 2021-06-16 03:00:18 +0900更新時刻: 2024-04-02 04:29:51 +0900

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