Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

著者	Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Hiroshi Amano.
掲載誌名	Japanese Journal of Applied Physics 60 [SB] SBBD03 ISSN: 13474065, 00214922 ESIでのカテゴリ: PHYSICS
出版社	IOP Publishing
発表年	2021
言語	English
DOI	https://doi.org/10.35848/1347-4065/abd538
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