Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching | SAMURAI, NIMS Researchers Directory Service

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Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Hiroshi Amano.

Japanese Journal of Applied Physics 60 [SB] SBBD03. 2021.

https://doi.org/10.35848/1347-4065/abd538

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-06-16 03:00:18 +0900Updated at: 2024-04-02 04:29:51 +0900

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