Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching
Author(s) | Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Hiroshi Amano. |
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Journal title | Japanese Journal of Applied Physics 60 [SB] SBBD03 ISSN: 13474065, 00214922 ESI category: PHYSICS |
Publisher | IOP Publishing |
Year of publication | 2021 |
Language | English |
DOI | https://doi.org/10.35848/1347-4065/abd538 |
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