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Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

Author(s)Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Hiroshi Amano.
Journal titleJapanese Journal of Applied Physics 60 [SB] SBBD03
ISSN: 13474065, 00214922
ESI category: PHYSICS
PublisherIOP Publishing
Year of publication2021
LanguageEnglish
DOIhttps://doi.org/10.35848/1347-4065/abd538
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