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松村 亮

松村 亮 (MATSUMURA, Ryo) 0000-0003-2303-4978

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305-0044 茨城県つくば市並木1-1 [アクセス]
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[論文] | [書籍] | [会議録] | [口頭発表] | [その他の文献] | [公開特許出願]

論文 TSV

2023
  1. Rahmat Hadi Saputro, Tatsuro Maeda, Ryo Matsumura, Naoki Fukata. Highly strained and heavily doped germanium thin films by non-equilibrium high-speed CW laser annealing for optoelectronic applications. Materials Science in Semiconductor Processing. 162 (2023) 107516 10.1016/j.mssp.2023.107516
  2. Qinqiang Zhang, Ryo Matsumura, Naoki Fukata. Synthesis of Large-Area GeS Thin Films with the Assistance of Pre-deposited Amorphous Nanostructured GeS Films: Implications for Electronic and Optoelectronic Applications. ACS Applied Nano Materials. 6 [8] (2023) 6920-6928 10.1021/acsanm.3c00669
2022
  1. Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing. ECS Transactions. 108 [5] (2022) 79-82 10.1149/10805.0079ecst
  2. Ryo Matsumura, Naoki Fukata. Formation of Free Hydrogen Gas By Annealing ALD-Al2O3/Si Stacked Structure. ECS Transactions. 108 [5] (2022) 57-61 10.1149/10805.0057ecst
  3. Ryo Matsumura, Naoki Fukata. Direct Detection of Free H2 Outgassing in Blisters Formed in Al2O3 Atomic Layers Deposited on Si and Methods of Its Prevention. ACS Applied Materials & Interfaces. 14 [1] (2022) 1472-1477 10.1021/acsami.1c20660
2021
  1. Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films. Crystal Growth & Design. 21 [11] (2021) 6523-6528 10.1021/acs.cgd.1c00966
  2. Ryo Matsumura, Satoshi Ishii, Naoki Fukata. Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing. Materials Science in Semiconductor Processing. 134 (2021) 106024 10.1016/j.mssp.2021.106024 Open Access
  3. Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications. ECS Transactions. (2021) 147-150 10.1149/10202.0147ecst
  4. Ryo Matsumura, Naoki Fukata. Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing. ECS Transactions. (2021) 141-146 10.1149/10202.0141ecst
  5. Ryo Matsumura, Naoki Fukata. Self-organized 〈1 0 0〉 direction growth of germanium film on insulator obtained by high speed continuous wave laser annealing. Materials Letters. 288 (2021) 129328 10.1016/j.matlet.2021.129328
2020
  1. Ryo Matsumura, Naoki Fukata. Growth of Tensile Strained Poly Germanium Thin Film on Glass Substrates by High Speed Continuous Wave Laser Annealing, and its Application to Germanium-Tin. ECS Journal of Solid State Science and Technology. 9 [6] (2020) 063002 10.1149/2162-8777/aba4f1
2019
  1. Yoshiki Nakajima, Hiromasa Murata, Yuya Kado, Ryo MATSUMURA, Naoki FUKATA, Takashi SUEMASU, Kaoru TOKO. Fe-induced layer exchange of multilayer graphene for rechargeable battery anodes. Applied Physics Express. (2019) 10.7567/1882-0786/ab5e3a
  2. Ryo Matsumura, Yunfan Wang, Wipakorn Jevasuwan, Naoki Fukata. Single grain growth of Si thin film on insulating substrate by limited region aluminum induced crystallization. Materials Letters. 252 (2019) 100-102 10.1016/j.matlet.2019.05.113
  3. Yong-Lie Sun, Ryo Matsumura, Wipakorn Jevasuwan, Naoki Fukata. Au–Sn Catalyzed Growth of Ge1–xSnx Nanowires: Growth Direction, Crystallinity, and Sn Incorporation. Nano Letters. 19 [9] (2019) 6270-6277 10.1021/acs.nanolett.9b02395
2017
  1. Kenta Moto, Takayuki Sugino, Ryo Matsumura, Hiroshi Ikenoue, Masanobu Miyao, Taizoh Sadoh. Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation. AIP Advances. 7 [7] (2017) 075204 10.1063/1.4993220 Open Access

書籍 TSV

会議録 TSV

2022
  1. Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. 高n型Geのエピタキシャル成長中におけるSbの再分布. 電子デバイス界面テクノロジー研究会 –材料・プロセス・デバイス特性の物理–プロシーディング集. 27 (2022) 113-116
2021
  1. サプトロ ラハマト ハディ, 松村 亮, 深田 直樹. Sb 添加Ge 縦型pn ダイオードの電気特性に及ぼす基板加熱堆積の効果. 電子デバイス界面テクノロジー研究会 –材料・プロセス・デバイス特性の物理–プロシーディング集. (2021) 133-136
  2. 松村 亮, 深田 直樹. 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成⻑. 電子デバイス界面テクノロジー研究会 –材料・プロセス・デバイス特性の物理–プロシーディング集. (2021) 63-66

口頭発表 TSV

2024
  1. ZHANG, Qinqiang, MATSUMURA, Ryo, FUKATA, Naoki. Synthesis of Large-Area GeS Thin Films Using Vapor Transport Method. 2024年第71回応用物理学会春季学術講演会. 2024
2023
  1. MATSUMURA, Ryo, SAPUTRO, Rahmat Hadi, FUKATA, Naoki. High-Speed Continuous Wave Laser Annealing: Non-equilibrium growth of Highly-Strained Germanium-Based Materials. MRM2023/IUMRS-ICA2023. 2023
  2. ZHANG, Qinqiang, MATSUMURA, Ryo, FUKATA, Naoki. Temperature dependence of GeS crystallization by vapor transport method. MANA International Symposium 2023. 2023
  3. ZHANG, Qinqiang, MATSUMURA, Ryo, FUKATA, Naoki. Effect of amorphous GeS on the morphology of crystallized GeS by vapor transport method. 2023年第84回応用物理学会秋季学術講演会. 2023
  4. SAPUTRO, Rahmat Hadi, MATSUMURA, Ryo, 前田辰郎, FUKATA, Naoki. Crystallization of n-type Si0.1Ge0.9 thin films by high-speed CW laser annealing. 第84回応用物理学会秋季学術講演会. 2023
  5. ZHANG, Qinqiang, MATSUMURA, Ryo, FUKATA, Naoki. Temperature Dependence of GeS Crystallization by Using a Vapor Transport Method. 2023 International Conference on Solid State Devices and Materials. 2023
  6. SAPUTRO, Rahmat Hadi, 前田辰郎, MATSUMURA, Ryo, FUKATA, Naoki. Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge1-xSnx Grown on Ge(100). 2023 International Conference on Solid State Devices and Materials (SSDM). 2023
  7. SAPUTRO, Rahmat Hadi, MATSUMURA, Ryo, 前田辰郎, FUKATA, Naoki. Growth speed dependence on growth feature of n-Ge thin films fabricated by high-speed CW laser annealing. EM-NANO 2023. 2023
  8. MATSUMURA, Ryo, FUKATA, Naoki. Growth of Germanium-based crystals on insulating substrates by non-equilibrium approach. EM-NANO2023. 2023
  9. SAPUTRO, Rahmat Hadi, MATSUMURA, Ryo, FUKATA, Naoki. Growth speed dependence on growth feature of n-Ge thin films fabricated by high-speed CW laser annealing. EM-NANO2023. 2023
  10. ZHANG, Qinqiang, MATSUMURA, Ryo, FUKATA, Naoki. Temperature dependence of GeS crystallization by vapor transport method. 第70回応用物理学会春季学術講演会. 2023
  11. サプトロ ラハマト ハディ, 松村 亮, 前田辰郎, 深田 直樹. 高速CWLA法による高伸張歪・高n型Ge薄膜の作製と評価. 第28回 電子デバイス界面テクノロジー研究会. 2023
2022
  1. MATSUMURA, Ryo, FUKATA, Naoki. Non-equilibrium growth of germanium based materials on insulating substrates. MANA Symposium 2022. 2022
  2. MATSUMURA, Ryo, FUKATA, Naoki. Formation of Free Hydrogen Gas by Annealing ALD-Al2O3/Si stacked structure. 241st ECS Meeting. 2022
  3. SAPUTRO, Rahmat Hadi, MATSUMURA, Ryo, FUKATA, Naoki. Crystallization of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing. 241st ECS Meeting. 2022
  4. サプトロ ラハマト ハディ, 松村 亮, 深田 直樹. 高n型Geのエピタキシャル成長中におけるSbの再分布. 電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―」 (第27回研究会). 2022
2021
  1. 松村 亮, 深田 直樹. Growth of high Sn concentration Germanium-tin films on insulators by microsecond laser annealing. 239th ECS Meeting/ https://www.electrochem.org/239. 2021
  2. SAPUTRO, Rahmat Hadi, MATSUMURA, Ryo, FUKATA, Naoki. Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Formation. 239th ECS Meeting/ https://www.electrochem.org/239. 2021
  3. 松村 亮, 深田 直樹. 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成⻑. 電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第26回研究会). 2021
  4. サプトロ ラハマト ハディ, 松村 亮, 深田 直樹. Sb添加Ge縦型pnダイオードの電気特性に及ぼす基板加熱堆積の効果. 第26回電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― http://www.edit-ws.jp/. 2021
2020
  1. JEVASUWAN, Wipakorn, ZHANG Xiaolong, MATSUMURA, Ryo, FUKATA, Naoki. Hole Gas Density Enhancement in Al-Catalyzed SiNW/i-Ge Core-Shell Structure by Thin B-doped Layer Interposition. The 67th JSAP Spring Meeting 2020. 2020
2019
  1. SUN, Yonglie, JEVASUWAN, Wipakorn, MATSUMURA, Ryo, FUKATA, Naoki. Sn Concentration Dependent Growth Direction of Au-Sn catalyzed Ge1-xSnx nanowires. International School and Symposium on Nanoscale Transport and phoTonics 2019. 2019
  2. 中島 義基, 村田 博雅, 加登 裕也, 吉澤 徳子, 松村 亮, 深田 直樹, 末益 崇, 都甲 薫. 多層グラフェンの金属誘起層交換合成と薄膜二次電池応用. 第80回応用物理学会秋季学術講演会. 2019
  3. MATSUMURA, Ryo, JEVASUWAN, Wipakorn, FUKATA, Naoki. Growth feature characterization of laser annealed GeSn films on insulators by EBSD method. Microscopy Conference 2019. 2019
  4. JEVASUWAN, Wipakorn, ZHANG Xiaolong, SUBRAMANI, Thiyagu, MATSUMURA, Ryo, FUKATA, Naoki. The Al-Catalyzed Silicon Nanowire Formation and Its Core-Shell Nanowire Photovoltaic Device. The 2nd MRS-Thailand Conference 2019. 2019
  5. JEVASUWAN, Wipakorn, ZHANG Xiaolong, SUBRAMANI, Thiyagu, MATSUMURA, Ryo, FUKATA, Naoki. B Doping Control and Characterization on Al-Catalyzed Si Nanowires and Their p-Si/i-Ge Core-Shell Nanowires. The 2019 Spring Meeting of E-MRS. 2019
  6. MATSUMURA, Ryo, JEVASUWAN, Wipakorn, FUKATA, Naoki. Growth of poly-GeSn thin-film on glass substrates by green CW laser annealing. EMRS 2019 Spring Meeting. 2019
  7. SUN, Yonglie, MATSUMURA, Ryo, JEVASUWAN, Wipakorn, FUKATA, Naoki. Growth direction, Sn content and crystallinity of Au-Sn catalyzed Ge1-xSnx nanowires. The 66th JSAP Sping Meeting, 2019. 2019
  8. JEVASUWAN, Wipakorn, ZHANG Xiaolong, SUBRAMANI, Thiyagu, MATSUMURA, Ryo, PRADEL, Charles Ken, FUKATA, Naoki. The Effects of B Doping on Al-Catalyzed Si Nanowire Formation and Their p-Si/i-Ge Core-Shell Nanowire Structures. The 66th JSAP Spring Meeting, 2019. 2019
  9. 松村 亮, ジェバスワン ウイパコーン, 深田 直樹. CWレーザーアニール法によるガラス上でのGeおよびGeSn薄膜結晶成長. 第66回応用物理学会春季学術講演会. 2019
  10. JEVASUWAN, Wipakorn, ZHANG Xiaolong, SUBRAMANI, Thiyagu, MATSUMURA, Ryo, FUKATA, Naoki. Boron Doping Effects on Aluminum-Catalyzed Silicon Nanowire Formation and Their Hole Gas Accumulation in Core-Shell Nanowire Structures. MANA International Symposium 2019. 2019
  11. SUN, Yonglie, MATSUMURA, Ryo, JEVASUWAN, Wipakorn, FUKATA, Naoki. Control of Growth Direction of Au-Sn Catalyzed Ge1-xSnx Nanowires. MANA International Symposium 2019. 2019
2018
  1. スブラマニ ティヤグ, チェン ジュンイ, ジェバスワン ウイパコーン, 松村 亮, 深田 直樹. Dopant-free asymmetric heterocontacts with Si nanowire solar cells using MoOx. 79th JSAP Autumn Meeting 2018. 2018
  2. ジェバスワン ウイパコーン, チェン ジュンイ, スブラマニ ティヤグ, プラデル チャールズ ケン, 武井 俊朗, 松村 亮, 深田 直樹. Al-Catalyzed Si Nanowire Formations on Pre-Etched and Post-Polished Thin Si Substrates for Photovoltaic Application. The 79th JSAP Autumn Meeting, 2018. 2018
  3. 孫 永烈, 松村 亮, ジェバスワン ウイパコーン, 深田 直樹. Growth of Au-Sn catalyzed Ge1-xSnx nanowires by vapor-liquid-solid method. The 79th JSAP Autumn Meeting, 2018. 2018
  4. 松村 亮, 王 云帆, ジェバスワン ウイパコーン, 深田 直樹. Single domain poly-Si film on insulating substrate by limited region aluminum induced layer exchange growth. The 2018 E-MRS Fall Meeting and Exhibit. 2018
  5. ジェバスワン ウイパコーン, チェン ジュンイ, スブラマニ ティヤグ, プラデル チャールズ ケン, Kei Shinotsuka, Yoshihisa Hatta, 武井 俊朗, 松村 亮, 深田 直樹. The Structural Controlled SiNWs by Wet and Dry Etching Processes for Photovoltaic Applications. The 2018 E-MRS Fall Meeting and Exhibit. 2018
  6. SUN, Yonglie, MATSUMURA, Ryo, JEVASUWAN, Wipakorn, FUKATA, Naoki. GeSn nanowires synthesized via vapor-liquid-solid growth with Au/Sn catalysts. The 2018 E-MRS Fall Meeting and Exhibit. 2018
  7. 孫 永烈, 松村 亮, ジェバスワン ウイパコーン, 深田 直樹. Growth of Au/Sn-catalyzed Ge 1-x Sn x nanowires with high Sn content (~5 at.%) . The 65th JSAP Sping Meeting, 2018. 2018
  8. ジェバスワン ウイパコーン, チェン ジュンイ, スブラマニ ティヤグ, プラデル チャールズ ケン, 武井 俊朗, 松村 亮, 深田 直樹. Al-Catalyzed Si Nanowires on Thin Si Wafer for Photovoltaic Application. The 65th JSAP Sping Meeting, 2018. 2018
  9. 張 小龍, ジェバスワン ウイパコーン, スブラマニ ティヤグ, 松村 亮, 深田 直樹. Realization of hole gas accumulation of p-Si/i-Ge core-shell nanowires by controlling boron doping concentration. The 65th JSAP Sping Meeting, 2018. 2018
  10. 張 小龍, ジェバスワン ウイパコーン, スブラマニ ティヤグ, 松村 亮, 深田 直樹. Characterization of hole gas accumulation of p-Si/i-Ge core-shell nanowires by controlling boron doping concentration. MANA International Symposium 2018. 2018
  11. ジェバスワン ウイパコーン, 張 小龍, スブラマニ ティヤグ, 松村 亮, 深田 直樹. Multi-functional Al-catalyzed Si nanowires: self-assembled zero and one-dimensional nanostructure formations. MANA International Symposium 2018. 2018

その他の文献 TSV

公開特許出願 TSV

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