Direct Detection of Free H<sub>2</sub> Outgassing in Blisters Formed in Al<sub>2</sub>O<sub>3</sub> Atomic Layers Deposited on Si and Methods of Its Prevention | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Direct Detection of Free H2 Outgassing in Blisters Formed in Al2O3 Atomic Layers Deposited on Si and Methods of Its Prevention

Ryo Matsumura, Naoki Fukata.

ACS Applied Materials & Interfaces 14 [1] 1472-1477. 2022.

https://doi.org/10.1021/acsami.1c20660

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2022-03-30 16:53:50 +0900更新時刻: 2024-04-02 05:12:19 +0900

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