SAMURAI - NIMS Researchers Database

HOME > 研究者を検索 > 分野別にみる

分野別にみる

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2022年05月21日

40件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Binxi Liang, Anjian Wang, Jian Zhou, Shihao Ju, Jian Chen, Kenji Watanabe, Takashi Taniguchi, Yi Shi, Songlin Li. Clean BN-Encapsulated 2D FETs with Lithography-Compatible Contacts. ACS Applied Materials & Interfaces. 14 [16] (2022) 18697-18703 10.1021/acsami.2c02956
  • Yih-Ren Chang, Tomonori Nishimura, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. Performance Enhancement of SnS/<i>h</i>-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method. ACS Applied Materials &amp; Interfaces. 14 [17] (2022) 19928-19937 10.1021/acsami.2c05534
  • Dipak Patel, Akiyoshi Matsumoto, Hiroaki Kumakura, Minoru Maeda, Su-Hun Kim, Hao Liang, Yusuke Yamauchi, Seyong Choi, Jung Ho Kim, Md. Shahriar A. Hossain. MgB<sub>2</sub> Superconducting Joint Architecture with the Functionality to Screen External Magnetic Fields for MRI Magnet Applications. ACS Applied Materials &amp; Interfaces. 14 [2] (2022) 3418-3426 10.1021/acsami.1c19581
  • Qiqi Zhang, Xin Chen, Zhongshan Yang, Tao Yu, Lequan Liu, Jinhua Ye. Precisely Tailoring Nitrogen Defects in Carbon Nitride for Efficient Photocatalytic Overall Water Splitting. ACS Applied Materials &amp; Interfaces. 14 [3] (2022) 3970-3979 10.1021/acsami.1c19638
  • Ryo Matsumura, Naoki Fukata. Direct Detection of Free H<sub>2</sub> Outgassing in Blisters Formed in Al<sub>2</sub>O<sub>3</sub> Atomic Layers Deposited on Si and Methods of Its Prevention. ACS Applied Materials &amp; Interfaces. 14 [1] (2022) 1472-1477 10.1021/acsami.1c20660
  • László Szabó, Xingtao Xu, Koichiro Uto, Joel Henzie, Yusuke Yamauchi, Izumi Ichinose, Mitsuhiro Ebara. Tailoring the Structure of Chitosan-Based Porous Carbon Nanofiber Architectures toward Efficient Capacitive Charge Storage and Capacitive Deionization. ACS Applied Materials &amp; Interfaces. 14 [3] (2022) 4004-4021 10.1021/acsami.1c20199
  • Tianzhuo Zhan, Keita Sahara, Haruki Takeuchi, Ryo Yokogawa, Kaito Oda, Zhicheng Jin, Shikang Deng, Motohiro Tomita, Yen-Ju Wu, Yibin Xu, Takeo Matsuki, Haidong Wang, Mengjie Song, Sujun Guan, Atsushi Ogura, Takanobu Watanabe. Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits. ACS Applied Materials &amp; Interfaces. 14 [5] (2022) 7392-7404 10.1021/acsami.1c20366
  • Xiang Hua, Theodor Axenie, Mateo Navarro Goldaraz, Kyungnam Kang, Eui-Hyeok Yang, Kenji Watanabe, Takashi Taniguchi, James Hone, Bumho Kim, Irving P. Herman. Improving the Optical Quality of MoSe<sub>2</sub> and WS<sub>2</sub> Monolayers with Complete <i>h</i>-BN Encapsulation by High-Temperature Annealing. ACS Applied Materials &amp; Interfaces. 14 [1] (2022) 2255-2262 10.1021/acsami.1c18991
  • Yongliang Chen, Chi Li, Simon White, Milad Nonahal, Zai-Quan Xu, Kenji Watanabe, Takashi Taniguchi, Milos Toth, Toan Trong Tran, Igor Aharonovich. Generation of High-Density Quantum Emitters in High-Quality, Exfoliated Hexagonal Boron Nitride. ACS Applied Materials &amp; Interfaces. 13 [39] (2021) 47283-47292 10.1021/acsami.1c14863
  • Yan Wang, Dong Wang, Jingzhe Xu, Lisheng Zhong, Jinghui Gao, Andong Xiao, Ming Wu, Zhixin He, Ruifeng Yao, Shengtao Li, Xiaobing Ren. Trirelaxor Ferroelectric Material with Giant Dielectric Permittivity over a Wide Temperature Range. ACS Applied Materials &amp; Interfaces. 13 [28] (2021) 33272-33281 10.1021/acsami.1c07537
  • ▲ページトップへ移動