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Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation

著者Kenta Moto, Takayuki Sugino, Ryo Matsumura, Hiroshi Ikenoue, Masanobu Miyao, Taizoh Sadoh.
掲載誌名AIP Advances 7 [7] 075204
ISSN: 21583226
ESIでのカテゴリ: MATERIALS SCIENCE
出版社AIP Publishing
発表年2017
言語English
DOIhttps://doi.org/10.1063/1.4993220
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