| 1369件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Seiji Nakashima, Osami Sakata, Hiroshi Funakubo, Takao Shimizu, Daichi Ichinose, Kota Takayama, Yasuhiko Imai, Hironori Fujisawa, Masaru Shimizu. Electric-field-induced lattice distortion in epitaxial BiFeO3 thin films as determined by in situ time-resolved x-ray diffraction. Applied Physics Letters. 111 [8] (2017) 082907 10.1063/1.5000495 | |
| Kunie Ishioka, Avinash Rustagi, Andreas Beyer, Wolfgang Stolz, Kerstin Volz, Ulrich Höfer, Hrvoje Petek, Christopher J. Stanton. Sub-picosecond acoustic pulses at buried GaP/Si interfaces. Applied Physics Letters. 111 [6] (2017) 062105 10.1063/1.4997913 | |
| Takehiro Shimaoka, Daisuke Kuwabara, Asuka Hara, Toshiharu Makino, Manobu Tanaka, Satoshi Koizumi. Charge transport properties of intrinsic layer in diamond vertical pin diode. Applied Physics Letters. 110 [21] (2017) 212104 10.1063/1.4984280 | |
| Hiroaki Sukegawa, Jason Paul Hadorn, Zhenchao Wen, Tadakatsu Ohkubo, Seiji Mitani, Kazuhiro Hono. Perpendicular magnetic anisotropy at lattice-matched Co2FeAl/MgAl2O4(001) epitaxial interfaces. Applied Physics Letters. 110 [11] (2017) 112403 10.1063/1.4978663 | |
| Hiroaki Sukegawa, Yushi Kato, Mohamed Belmoubarik, P.-H. Cheng, Tadaomi Daibou, Naoharu Shimomura, Yuuzo Kamiguchi, Junichi Ito, Hiroaki Yoda, Tadakatsu Ohkubo, Seiji Mitani, Kazuhiro Hono. MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height. Applied Physics Letters. 110 [12] (2017) 122404 10.1063/1.4977946 | |
| Ovidiu Cretu, Chao Zhang, Dmitri Golberg. Nanometer-scale mapping of defect-induced luminescence centers in cadmium sulfide nanowires. Applied Physics Letters. 110 [11] (2017) 111904 10.1063/1.4978603 | |
| Michael Schmitz, Stephan Engels, Luca Banszerus, Kenji Watanabe, Takashi Taniguchi, Christoph Stampfer, Bernd Beschoten. High mobility dry-transferred CVD bilayer graphene. Applied Physics Letters. 110 [26] (2017) 263110 10.1063/1.4990390 | |
| D. Suess, C. Vogler, F. Bruckner, H. Sepehri-Amin, C. Abert. Significant reduction of critical currents in MRAM designs using dual free layer with perpendicular and in-plane anisotropy. Applied Physics Letters. 110 [25] (2017) 252408 10.1063/1.4987140 | |
| J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide. Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator. Applied Physics Letters. 110 [20] (2017) 203502 10.1063/1.4983091 | |
| Kazuki Ito, Hiroshi Saito, Kento Sasaki, Hideyuki Watanabe, Tokuyuki Teraji, Kohei M. Itoh, Eisuke Abe. Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond. Applied Physics Letters. 110 [21] (2017) 213105 10.1063/1.4984060 | |
