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Significant reduction of critical currents in MRAM designs using dual free layer with perpendicular and in-plane anisotropy
(Significant reduction of critical currents in MRAM designs using dual free layer with perpendicular and in-plane anisotropy)

D. Suess, C. Vogler, F. Bruckner, H. Sepehri-Amin, C. Abert.
Applied Physics Letters 110 [25] 252408. 2017.

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    作成時刻: 2017-06-30 22:33:15 +0900更新時刻: 2024-03-30 00:12:13 +0900

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