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Significant reduction of critical currents in MRAM designs using dual free layer with perpendicular and in-plane anisotropy
(Significant reduction of critical currents in MRAM designs using dual free layer with perpendicular and in-plane anisotropy)

D. Suess, C. Vogler, F. Bruckner, H. Sepehri-Amin, C. Abert.

Applied Physics Letters 110 [25] 252408. 2017.

https://doi.org/10.1063/1.4987140

NIMS author(s)

SEPEHRI AMIN, Hossein

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-06-30 22:33:15 +0900 Updated at: 2026-10-29 05:22:56 +0900

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