| 44件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs. IEEE Transactions on Electron Devices. 71 [3] (2024) 1764-1768 10.1109/ted.2024.3356468 Open Access | |
| Takehiro Shimaoka, Hitoshi Umezawa, Gwenole Jacopin, Satoshi Koizumi, Takeshi Fujiwara, Julien Pernot. Temperature Dependence of Betavoltaic Cell Performance of Diamond pn Junction Diode. IEEE Electron Device Letters. 45 [1] (2024) 96-99 10.1109/led.2023.3333803 | |
| Haonan Liu, Lixin Jing, Kexin He, Dandan Qu, Yushan Li, Takeo Minari, Ruiqiang Tao, Xubing Lu, Junming Liu. High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-Coated Hafnium Oxide Gate Dielectrics. IEEE Electron Device Letters. 44 [9] (2023) 1508-1511 10.1109/led.2023.3295594 | |
| Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition. IEEE Transactions on Electron Devices. 70 [5] (2023) 2199-2203 10.1109/ted.2023.3256349 Open Access | |
| Takehiro Shimaoka, Meiyong Liao, Satoshi Koizumi. n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C. IEEE Electron Device Letters. 43 [4] (2022) 588-591 10.1109/led.2022.3156149 | |
| S. Hitesh, Pushkar Dasika, Kenji Watanabe, Takashi Taniguchi, Kausik Majumdar. Integration of 3-Level MoS Multibridge Channel FET With 2D Layered Contact and Gate Dielectric. IEEE Electron Device Letters. 43 [11] (2022) 1993-1996 10.1109/led.2022.3206866 | |
| Cheng Chang, Yushan Li, Yan Zhang, Wentao Shuai, Haonan Liu, Ting Huang, Zhen Fan, Takeo Minari, Guofu Zhou, Ruiqiang Tao, Xubing Lu, Junming Liu. Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update. IEEE Electron Device Letters. 43 [9] (2022) 1467-1470 10.1109/led.2022.3189758 | |
| Pushkar Dasika, Kenji Watanabe, Takashi Taniguchi, Kausik Majumdar. Electrically Self-Aligned, Reconfigurable Test Structure Using WSe2/SnSe2 Heterojunction for TFET and MOSFET. IEEE Transactions on Electron Devices. 69 [9] (2022) 5377-5381 10.1109/ted.2022.3191991 | |
| Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide. Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs. IEEE Transactions on Electron Devices. 69 [3] (2022) 1181-1185 10.1109/ted.2022.3140699 | |
| Hiroya Shike, Rihito Kuroda, Ryota Kobayashi, Maasa Murata, Yasuyuki Fujihara, Manabu Suzuki, Shoma Harada, Taku Shibaguchi, Naoya Kuriyama, Takaki Hatsui, Jun Miyawaki, Tetsuo Harada, Yuichi Yamasaki, Takeo Watanabe, Yoshihisa Harada, Shigetoshi Sugawa. A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank. IEEE Transactions on Electron Devices. 68 [4] (2021) 2056-2063 10.1109/ted.2021.3062576 Open Access | |
