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分野別にみる

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2022年08月13日

32件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Katsumi Nagaoka, Shun-ichiro Ohmi. Bias-voltage-dependent measurement of apparent barrier height on low-work-function thin film. Journal of Vacuum Science & Technology B. 38 [6] (2020) 062801 10.1116/6.0000436
  • Tomomi Akiyama, Naoya Miyauchi, Akiko N. Itakura, Takayuki Yamagishi, Satoka Aoyagi. Fusion data analysis of imaging data of hydrogen-permeated steel obtained by complementary methods. Journal of Vacuum Science & Technology B. 38 [3] (2020) 034007 10.1116/6.0000009
  • Katsuhisa Murakami, Shunsuke Tanaka, Takuya Iijima, Masayoshi Nagao, Yoshihiro Nemoto, Masaki Takeguchi, Yoichi Yamada, Masahiro Sasaki. Electron emission properties of graphene-oxide-semiconductor planar-type electron emission devices. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36 [2] (2018) 02C110 10.1116/1.5006866
  • Chikako Sakai, Nobuyuki Ishida, Shoko Nagano, Keiko Onishi, Daisuke Fujita. In situ voltage-application system for active voltage contrast imaging in helium ion microscope. Journal of Vacuum Science & Technology B. 36 [4] (2018) 042903 10.1116/1.5031086
  • Tin S. Cheng, Andrew Davies, Alex Summerfield, YongJin Cho, Izabela Cebula, Richard J. A. Hill, Christopher J. Mellor, Andrei N. Khlobystov, Takashi Taniguchi, Kenji Watanabe, Peter H. Beton, C. Thomas Foxon, Laurence Eaves, Sergei V. Novikov. High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34 [2] (2016) 02L101 10.1116/1.4938157
  • Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyo, Masayuki Kimura, Hiroyuki Yamada, Tomoji Ohishi. Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32 [3] (2014) 03D121 10.1116/1.4869059
  • Kentaro Watanabe, Masakazu Ichikawa, Yoshiaki Nakamura, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe. Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30 [2] (2012) 021802 10.1116/1.3684985
  • Takatoshi Yamada, Christoph E. Nebel, Takashi Taniguchi. Field electron emission properties of n-type (111)-oriented single crystal cubic boron nitride. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29 [2] (2011) 02B115 10.1116/1.3565429
  • Akihiro Ohtake, Kazutaka Mitsuishi. Polarity controlled InAs{111} films grown on Si(111). Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29 [3] (2011) 031804 10.1116/1.3589807
  • Shrikrishna Dattatraya Sartale, Michiko Yoshitake. Investigation of Cu–Al surface alloy formation on Cu substrate. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28 [2] (2010) 353-358 10.1116/1.3359591
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