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You can search NIMS articles by Clarivate ESI category (Materials Science, Physics, Chemistry, Engineering, Biology and etc.), title and terms from abstract.

Last updated: November 12, 2024

21 article(s) found. Sorted by publication dates. (Help)
  • Akihiro Ohtake, Takuya Kawazu, Takaaki Mano. Arsenic-flux dependence of surface morphology in InAs homoepitaxy. Journal of Vacuum Science & Technology A. 42 [6] (2024) 062702 10.1116/6.0003957 Open Access
  • Fumikazu Mizutani, Makoto Mizui, Nobutaka Takahashi, Mari Inoue, Toshihide Nabatame, Fumikazu Mizutani, Makoto Mizui, Nobutaka Takahashi. Atomic layer deposition of ZnO thin films using a liquid cyclopentadienyl-based precursor. Journal of Vacuum Science & Technology A. 42 [2] (2024) 022403 10.1116/6.0003178
  • Naoya Miyauchi, Taro Yakabe, Yoshiharu Murase, Masahiro Kitajima, Shoji Takagi, Akiko N. Itakura, Shoji Takagi. Apparatus design of operando hydrogen microscope for visualization of time-dependent distribution of hydrogen. Journal of Vacuum Science & Technology A. 42 [1] (2024) 013201 10.1116/6.0003153 Open Access
  • Zhuoqun Wen, Kamruzzaman Khan, Kai Sun, Ruby Wellen, Yuichi Oshima, Elaheh Ahmadi, Zhuoqun Wen, Kamruzzaman Khan, Kai Sun, Ruby Wellen, Elaheh Ahmadi. Thermal stability of HVPE-grown (0001) α-Ga2O3 on sapphire template under vacuum and atmospheric environments. Journal of Vacuum Science & Technology A. 41 [4] (2023) 043403 10.1116/6.0002559
  • George H. Major, Joshua W. Pinder, Daniel E. Austin, Donald R. Baer, Steven L. Castle, Jan Čechal, B. Maxwell Clark, Hagai Cohen, Jonathan Counsell, Alberto Herrera-Gomez, Pavitra Govindan, Seong H. Kim, David J. Morgan, Robert L. Opila, Cedric J. Powell, Stanislav Průša, Adam Roberts, Mario Rocca, Naoto Shirahata, Tomáš Šikola, Emily F. Smith, Regina C. So, John E. Stovall, Jennifer Strunk, Andrew Teplyakov, Jeff Terry, Stephen G. Weber, Matthew R. Linford, George H. Major, Joshua W. Pinder, Daniel E. Austin, Donald R. Baer, Steven L. Castle, Jan Čechal, B. Maxwell Clark, Hagai Cohen, Jonathan Counsell, Alberto Herrera-Gomez, Pavitra Govindan, Seong H. Kim, David J. Morgan, Robert L. Opila, Cedric J. Powell, Stanislav Průša, Adam Roberts, Mario Rocca, Tomáš Šikola, Emily F. Smith, Regina C. So, John E. Stovall, Jennifer Strunk, Andrew Teplyakov, Jeff Terry, Stephen G. Weber, Matthew R. Linford. Perspective on improving the quality of surface and material data analysis in the scientific literature with a focus on x-ray photoelectron spectroscopy (XPS). Journal of Vacuum Science & Technology A. 41 [3] (2023) 038501 10.1116/6.0002437
  • Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, Yuichi Oshima, David C. Hays, Fan Ren, S. J. Pearton, Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, David C. Hays, Fan Ren, S. J. Pearton. Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3. Journal of Vacuum Science & Technology A. 41 [2] (2023) 023205 10.1116/6.0002453
  • Takeo Ohsawa. Atomic-scale growth, imaging, spectroscopy, and electronic transport properties of metal-oxide films and interfaces. Journal of Vacuum Science & Technology A. 40 [1] (2022) 010806 10.1116/6.0001469
  • Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide. Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition. Journal of Vacuum Science & Technology A. 39 [6] (2021) 062405 10.1116/6.0001334
  • Michiko Yoshitake. General method for predicting ZnO–metal interface termination: Extension of the method for Al2O3–metal systems. Journal of Vacuum Science & Technology A. 39 [6] (2021) 063217 10.1116/6.0001312
  • Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Hajime Kiyono. Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing. Journal of Vacuum Science & Technology A. 39 [1] (2021) 012401 10.1116/6.0000626
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