Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition

Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition
(Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition)

著者	Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide.
掲載誌名	Journal of Vacuum Science & Technology A 39 [6] 062405 ISSN: 07342101, 15208559 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	American Vacuum Society
発表年	2021
言語	English
DOI	https://doi.org/10.1116/6.0001334
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