Influence of HfO<sub>2</sub> and SiO<sub>2</sub> interfacial layers on the characteristics of n-GaN/HfSiO<i><sub>x</sub></i> capacitors using plasma-enhanced atomic layer deposition | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Influence of HfO₂ and SiO₂ interfacial layers on the characteristics of n-GaN/HfSiO_x capacitors using plasma-enhanced atomic layer deposition
(Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition)

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide.

Journal of Vacuum Science & Technology A 39 [6] 062405. 2021.

https://doi.org/10.1116/6.0001334

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-12-23 15:42:42 +0900 更新時刻: 2026-09-29 07:06:42 +0900

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