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機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年02月27日

31件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Supawan Ngamprapawat, Jimpei Kawase, Tomonori Nishimura, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio. From h‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h‐BN for Applications in Electronic and Optoelectronic Devices. Advanced Electronic Materials. 9 [8] (2023) 10.1002/aelm.202300083
  • Makoto Sakurai, Tsuyoshi Ueta, Christian Joachim. Weakly Interacting Molecular Spins in On‐Surface Synthesized Nanoclusters on a Graphene Oxide Nanosheet. Advanced Electronic Materials. 9 [10] (2023) 10.1002/aelm.202300347
  • Bo He, Gang He, Shanshan Jiang, Jiangwei Liu, Elvira Fortunato, Rodrigo Martins. Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture. Advanced Electronic Materials. 9 [2] (2023) 2201007 10.1002/aelm.202201007
  • Shinji Isogami, Yukiko K. Takahashi. Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications. Advanced Electronic Materials. 9 [1] (2023) 10.1002/aelm.202200515
  • Yoshitaka Shingaya, Amir Zulkefli, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama. Dual-Gate Anti-Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations. Advanced Electronic Materials. 9 [1] (2023) 2200704 10.1002/aelm.202200704
  • Eike Icking, Luca Banszerus, Frederike Wörtche, Frank Volmer, Philipp Schmidt, Corinne Steiner, Stephan Engels, Jonas Hesselmann, Matthias Goldsche, Kenji Watanabe, Takashi Taniguchi, Christian Volk, Bernd Beschoten, Christoph Stampfer. Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene. Advanced Electronic Materials. 8 [11] (2022) 2200510 10.1002/aelm.202200510
  • Huije Ryu, Dong‐Hyun Kim, Junyoung Kwon, Sang Kyu Park, Wanggon Lee, Hyungtak Seo, Kenji Watanabe, Takashi Taniguchi, SunPhil Kim, Arend M. van der Zande, Jangyup Son, Gwan‐Hyoung Lee. Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors. Advanced Electronic Materials. 8 [10] (2022) 2101370 10.1002/aelm.202101370
  • Yusaku Nishimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Suguru Kitani, Kota Hanzawa, Shigenori Ueda, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya. Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb 1− x Sn x )Se. Advanced Electronic Materials. 8 [9] (2022) 2200024 10.1002/aelm.202200024
  • Jian Wang, Yong‐Chang Lau, Weinan Zhou, Takeshi Seki, Yuya Sakuraba, Takahide Kubota, Keita Ito, Koki Takanashi. Strain‐Induced Large Anomalous Nernst Effect in Polycrystalline Co 2 MnGa/AlN Multilayers. Advanced Electronic Materials. 8 [9] (2022) 2101380 10.1002/aelm.202101380
  • Sungwon Lee, Hyungyu Choi, Inyong Moon, Hoseong Shin, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo. Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors. Advanced Electronic Materials. 8 [5] (2022) 2101169 10.1002/aelm.202101169
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