Gate‐Reconfigurable Single‐ and Double‐Dot Transport in Trilayer MoSe
                    <sub>2</sub>

Seungwoo Lee; Minjun Park; Yunsang Noh; Sung Jin An; Soyun Kim; Minseo Cho; Dohun Kim; Takashi Taniguchi; Kenji Watanabe; Minkyung Jung; Youngwook Kim; Seungwoo Lee; Minjun Park; Yunsang Noh; Sung Jin An; Soyun Kim; Minseo Cho; Dohun Kim; Takashi Taniguchi; Kenji Watanabe; Minkyung Jung; Youngwook Kim

doi:10.1002/aelm.70564

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Gate‐Reconfigurable Single‐ and Double‐Dot Transport in Trilayer MoSe ₂

Seungwoo Lee, Minjun Park, Yunsang Noh, Sung Jin An, Soyun Kim, Minseo Cho, Dohun Kim, Takashi Taniguchi, Kenji Watanabe, Minkyung Jung, Youngwook Kim.

Advanced Electronic Materials 12 [18] e70564. 2026.

https://doi.org/10.1002/aelm.70564

Open Access Wiley (Publisher)

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2026-10-06 03:08:19 +0900 更新時刻: 2026-11-07 04:31:39 +0900

Gate‐Reconfigurable Single‐ and Double‐Dot Transport in Trilayer MoSe 2

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Gate‐Reconfigurable Single‐ and Double‐Dot Transport in Trilayer MoSe ₂