HOME > 論文 > 書誌詳細Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox MechanismsTakashi Tsuchiya, Daiki Nishioka, Wataru Namiki, Kazuya Terabe. Advanced Electronic Materials 2400625. 2024.https://doi.org/10.1002/aelm.202400625 Open Access Wiley (Publisher) Materials Data Repository (MDR) NIMS著者土屋 敬志西岡 大貴並木 航寺部 一弥Materials Data Repository (MDR)上の本文・データセットMDRavailable Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms 作成時刻: 2024-12-13 03:16:25 +0900更新時刻: 2025-01-14 04:49:50 +0900