| 307件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Tomihiro Hashizume, Hiroshi Kajiyama, Yuji Suwa, Seiji Heike, S. Matsuura, Jun Nara, Takahisa Ohno. Adsorption of Si atom on H-terminated Si(001)-2x1 surface. Applied Surface Science. 216 [1-4] (2003) 15-18 10.1016/s0169-4332(03)00481-1 | |
| Yoshihito Tomida, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Shigeki Otani, Hiroyuki Kinoshita, Rong Liu, Abigail Bell, Fernando A. Ponce. Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy. Applied Surface Science. 216 [1-4] (2003) 502-507 10.1016/s0169-4332(03)00466-5 | |
| PARK, Daechul, HANEDA, Hajime, OHASHI, Naoki, HISHITA, Shunichi, HANEDA Hajime. SIMS DEPTH PROFILING OF N AND In IN ZnO SINGLE CRYSTAL. APPLIED SURFACE SCIENCE. 203 [15] (2003) 359-362 | |
| Hajime Haneda. A study of defect structure in oxide materials by secondary ion mass spectrometry. Applied Surface Science. 203-204 (2003) 625-629 10.1016/s0169-4332(02)00779-1 | |
| Yoshiyuki Suda, Naoyuki Hosoya, Kazushi Miki. Si Submonolayer and Monolayer Digital Growth Operation Techniques Using Si2H6 as Atomically Controlled Growth Nanotechnology. Applied Surface Science. 216 [1-4] (2003) 424-430 10.1016/s0169-4332(03)00387-8 | |
| SAKAGUCHI, Isao. Light element distribution in ZnO thin film deposited by electron cyclotron resonance assisted chemical vapor deposition. APPLIED SURFACE SCIENCE. 15 (2003) 652-655 | |
| A.N. Itakura, M. Shimoda, M. Kitajima. Surface stress relaxation of silicon oxide by radical nitrogen. Applied Surface Science. 216 [1-4] (2003) 41-45 10.1016/s0169-4332(03)00494-x | |
| M Xu, Y Takano, T Hatano, T Kimura, D Fujita. Auger electron spectroscopy study of MgB2 surface. Applied Surface Science. 205 [1-4] (2003) 225-230 10.1016/s0169-4332(02)01095-4 | |
| 赤羽 隆史, 藤浪真紀, 澤田嗣郎. 陽電子消滅同時計数ドップラー幅測定によるSi中の照射欠陥の研究. APPLIED SURFACE SCIENCE. (2002) 116-121 | |
| ITAKURA, Akiko, KITAJIMA, Masahiro. Surface stress relaxation of silicon oxide by radical nitrogen. APPLIED SURFACE SCIENCE. (2002) | |
