HOME > 論文 > 書誌詳細Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy(ZrB2基板上でのGaNのMOCVD成長)Yoshihito Tomida, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Shigeki Otani, Hiroyuki Kinoshita, Rong Liu, Abigail Bell, Fernando A. Ponce. Applied Surface Science 216 [1-4] 502-507. 2003.https://doi.org/10.1016/s0169-4332(03)00466-5 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 11:58:14 +0900更新時刻: 2024-05-02 09:54:38 +0900
