| 1002件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Mukesh Kumar, Naoto Umezawa, Motoharu Imai. Recent advances in computational studies of thin-film solar cell material BaSi2. Japanese Journal of Applied Physics. 59 [SF] (2020) SF0803 10.35848/1347-4065/ab6b82 | |
| Takanori Mimura, Takao Shimizu, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo. Thickness- and orientation- dependences of Curie temperature in ferroelectric epitaxial Y doped HfO2 films. Japanese Journal of Applied Physics. 59 [SG] (2020) SGGB04 10.35848/1347-4065/ab6d84 | |
| Hiroaki Nakamura, Hisanori Miyanishi, Takuo Yasunaga, Susumu Fujiwara, Tomoko Mizuguchi, Ayako Nakata, Tsuyoshi Miyazaki, Takao Otsuka, Takahiro Kenmotsu, Yuji Hatano, Shinji Saito. Molecular dynamics study on DNA damage by tritium disintegration. Japanese Journal of Applied Physics. 59 [SA] (2020) SAAE01 10.7567/1347-4065/ab460d | |
| Takeshi Yasuda, Kenji Sakamoto. Photovoltaic properties of planar organic solar cells using perylenetetracarboxylic diimide with phenylethyl derivatives. Japanese Journal of Applied Physics. 59 [SD] (2020) SDDD01 10.7567/1347-4065/ab54fe | |
| Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe. Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. Japanese Journal of Applied Physics. 59 [2] (2020) 025512 10.35848/1347-4065/ab6faf Open Access | |
| Qiao Li, Xuefu Zhang, Da Jiang, Yoshitaka Shingaya, Daiju Tsuya, Tomonobu Nakayama. Raman intensity oscillation of graphene over SiO2/Si micro-cavity. Japanese Journal of Applied Physics. 59 [2] (2020) 028001 10.35848/1347-4065/ab67e0 | |
| Hironori Okumura, Yuji Kato, Takayoshi Oshima, Tomás Palacios. Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010). Japanese Journal of Applied Physics. 58 [SB] (2019) SBBD12 10.7567/1347-4065/ab002b | |
| Takayoshi Oshima, Yuji Kato, Eisuke Magome, Eiichi Kobayashi, Kazutoshi Takahashi. Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface. Japanese Journal of Applied Physics. 58 [6] (2019) 060910 10.7567/1347-4065/ab219f | |
| Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese Journal of Applied Physics. 58 [SC] (2019) SCCD25 10.7567/1347-4065/ab106c | |
| Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates. Japanese Journal of Applied Physics. 58 [SC] (2019) SCCB24 10.7567/1347-4065/ab1250 Open Access | |
