Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

著者	Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano.
掲載誌名	Japanese Journal of Applied Physics 58 [SC] SCCD25 ISSN: 13474065, 00214922 ESIでのカテゴリ: PHYSICS
出版社	IOP Publishing
発表年	2019
言語	English
DOI	https://doi.org/10.7567/1347-4065/ab106c
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