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Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

著者Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano.
掲載誌名Japanese Journal of Applied Physics 58 [SC] SCCD25
ISSN: 13474065, 00214922
ESIでのカテゴリ: PHYSICS
出版社IOP Publishing
発表年2019
言語English
DOIhttps://doi.org/10.7567/1347-4065/ab106c
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