HOME > 論文 > 書誌詳細Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capabilityHayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Japanese Journal of Applied Physics 58 [SC] SCCD25. 2019.https://doi.org/10.7567/1347-4065/ab106c NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻 :2021-06-10 03:00:19 +0900 更新時刻 :2021-06-10 03:01:50 +0900