HOME > Article > DetailDeeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capabilityHayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Japanese Journal of Applied Physics 58 [SC] SCCD25. 2019.https://doi.org/10.7567/1347-4065/ab106c NIMS author(s)Fulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-06-10 03:00:19 +0900Updated at: 2024-04-02 04:13:17 +0900
