| 1258 article(s) found. Sorted by publication dates. (Help) | |
|---|
| P A Atanasov, N N Nedyalkov, A O Dikovska, N Fukata, W Jevasuwan. SERS active substrates for neonicotinoids studies. Journal of Physics: Conference Series. 2487 [1] (2023) 012012 10.1088/1742-6596/2487/1/012012 Open Access | |
| Omar Azzaroni, Esteban Piccinini, Gonzalo Fenoy, Waldemar Marmisollé, Katsuhiko Ariga. Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics. Nanotechnology. 34 [47] (2023) 472001 10.1088/1361-6528/acef26 | |
| J Valenta, N Tsujii, H Yamaoka, F Honda, Y Hirose, H Sakurai, N Terada, T Naka, T Nakane, T Koizumi, H Ishii, N Hiraoka, T Mori. Unusually strong electronic correlation and field-induced ordered phase in YbCo2. Journal of Physics: Condensed Matter. 35 [28] (2023) 285601 10.1088/1361-648x/acca5a | |
| Daiki Nishioka, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe. Enhanced synaptic characteristics of H
x
WO3-based neuromorphic devices, achieved by current pulse control, for artificial neural networks. Neuromorphic Computing and Engineering. 3 [3] (2023) 034008 10.1088/2634-4386/acf1c6 Open Access | |
| K Oreszczuk, A Rodek, M Goryca, T Kazimierczuk, M Raczyński, J Howarth, T Taniguchi, K Watanabe, M Potemski, P Kossacki. Enhancement of electron magnetic susceptibility due to many-body interactions in monolayer MoSe2. 2D Materials. 10 [4] (2023) 045019 10.1088/2053-1583/acefe3 Open Access | |
| Yuichi Oshima, Takayoshi Oshima. Homoepitaxial growth of
1ˉ02
β-Ga2O3 by halide vapor phase epitaxy. Semiconductor Science and Technology. 38 [10] (2023) 105003 10.1088/1361-6641/acf241 | |
| Rajveer Jha, Valenta Jaroslav, Naohito Tsujii, Takashi Naka, Takeshi Kawahata, Chiduru Kawashima, Hiroki Takahashi, Takao Mori, Yoshikazu Mizuguchi. Evaluation of insulating behavior by Pb substitution and pressure-induced superconductivity in La2O2Bi3−
x
Pb1+
x
S6. Superconductor Science and Technology. 36 [10] (2023) 105002 10.1088/1361-6668/aceeba | |
| Yuichi Oshima, Takayoshi Oshima. Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3. Japanese Journal of Applied Physics. 62 [8] (2023) 080901 10.35848/1347-4065/acee3b | |
| Masatomo Sumiya. Characterization of wide-gap semiconductors by photothermal deflection spectroscopy. Japanese Journal of Applied Physics. 62 [SN] (2023) SN1007 10.35848/1347-4065/ace3cf Open Access | |
| Mitsunori Kurahashi. Application of hyperthermal alignment controlled O2 beam and atomic oxygen beam to surface reaction analysis. Japanese Journal of Applied Physics. 62 [SL] (2023) SL0802 10.35848/1347-4065/ace727 | |
