| 994 article(s) found. Sorted by publication dates. (Help) | |
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| Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese Journal of Applied Physics. 58 [SC] (2019) SCCD25 10.7567/1347-4065/ab106c | |
| Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates. Japanese Journal of Applied Physics. 58 [SC] (2019) SCCB24 10.7567/1347-4065/ab1250 Open Access | |
| Takuya Iwasaki, Taku Kato, Hirohito Ito, Kenji WATANABE, Takashi Taniguchi, Yutaka Wakayama, Tsuyoshi Hatano, Satoshi Moriyama. Fabrication and characterization of quantum dot devices based on tetralayer graphene/hexagonal boron nitride heterostructures. Japanese Journal of Applied Physics. (2019) 10.7567/1347-4065/ab65a8 | |
| Tin Phan Nguy, Ryoma Hayakawa, Volkan Kilinc, Matthieu Petit, Jean-Manuel Raimundo, Anne Charrier, Yutaka Wakayama. Stable operation of water-gated organic field-effect transistor depending on channel flatness, electrode metals and surface treatment. Japanese Journal of Applied Physics. 58 [SD] (2019) SDDH02 10.7567/1347-4065/ab09d2 | |
| Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma. Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor. Japanese Journal of Applied Physics. 58 [SI] (2019) SIIB05 10.7567/1347-4065/ab0c76 | |
| Katsunori Ueno, Takahiro Tadokoro, Yuichiro Ueno, Keisuke Sasaki, Satoshi Koizumi, Akiyoshi Chayahara, Yoshiaki Mokuno, Shintaro Hirano, Junichi H. Kaneko. Heat and radiation resistances of diamond semiconductor in gamma-ray detection. Japanese Journal of Applied Physics. 58 [10] (2019) 106509 10.7567/1347-4065/ab4044 | |
| Kei Terayama, Koji Tsuda, Ryo Tamura. Efficient recommendation tool of materials by an executable file based on machine learning. Japanese Journal of Applied Physics. 58 [9] (2019) 098001 10.7567/1347-4065/ab349b Open Access | |
| Hiroki Shioya, Kazuhito Tsukagoshi, Keiji Ueno, Akira Oiwa. Selective oxidation of the surface layer of bilayer WSe2 by laser heating. Japanese Journal of Applied Physics. 58 [12] (2019) 120903 10.7567/1347-4065/ab50da | |
| Kota Tatejima, Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Setsu Suzuki, Atsushi Ogura, Toyohiro Chikyow. Effects of substrate self-bias and nitrogen flow rate on non-polar AlN film growth by reactive sputtering. Japanese Journal of Applied Physics. 58 [SD] (2019) SDDG07 10.7567/1347-4065/ab088f | |
| David R. Bowler, Jack S. Baker, Jack T. L. Poulton, Shereif Y. Mujahed, Jianbo Lin, Sushma Yadav, Zamaan Raza, Tsuyoshi Miyazaki. Highly accurate local basis sets for large-scale DFT calculations in conquest. Japanese Journal of Applied Physics. 58 [10] (2019) 100503 10.7567/1347-4065/ab45af | |
