| 1369 article(s) found. Sorted by publication dates. (Help) | |
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| Johannes Feldl, Martin Feneberg, Alexandra Papadogianni, Jonas Lähnemann, Takahiro Nagata, Oliver Bierwagen, Rüdiger Goldhahn, Manfred Ramsteiner. Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2O3 alloy films. Applied Physics Letters. 119 [4] (2021) 042101 10.1063/5.0056532 | |
| Ryo Matsumoto, Sayaka Yamamoto, Shintaro Adachi, Takeshi Sakai, Tetsuo Irifune, Yoshihiko Takano. Diamond anvil cell with boron-doped diamond heater for high-pressure synthesis and in situ transport measurements. Applied Physics Letters. 119 [5] (2021) 053502 10.1063/5.0059705 | |
| Masato Ito, Yu Yamashita, Taizo Mori, Katsuhiko Ariga, Jun Takeya, Shun Watanabe. Band mobility exceeding 10 cm2 V−1 s−1 assessed by field-effect and chemical double doping in semicrystalline polymeric semiconductors. Applied Physics Letters. 119 [1] (2021) 013302 10.1063/5.0052279 | |
| Jianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, SANG, Liwen, Xinqiang Wang, Weiku Ge, Bo Shen, Jianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen. High-mobility n−-GaN drift layer grown on Si substrates. Applied Physics Letters. 118 [22] (2021) 222106 10.1063/5.0049133 | |
| Matthew C. DeCapua, Yueh-Chun Wu, Takashi Taniguchi, Kenji Watanabe, Jun Yan. Probing the bright exciton state in twisted bilayer graphene via resonant Raman scattering. Applied Physics Letters. 119 [1] (2021) 013103 10.1063/5.0049458 | |
| Shaopeng Feng, Yutian Yang, Lei Gao, Kenji Watanabe, Takashi Taniguchi, Zhenliang Hu, Junpeng Lu, Zhenhua Ni. Tunable self-trapped excitons in 2D layered rubrene. Applied Physics Letters. 118 [25] (2021) 253103 10.1063/5.0049942 | |
| Davit A. Ghazaryan, Abhishek Misra, Evgenii E. Vdovin, Kenji Watanabe, Takashi Taniguchi, Sergei V. Morozov, Artem Mishchenko, Kostya S. Novoselov. Twisted monolayer and bilayer graphene for vertical tunneling transistors. Applied Physics Letters. 118 [18] (2021) 183106 10.1063/5.0048191 | |
| L. H. Yang, B. Da, H. Yoshikawa, S. Tanuma, J. Hu, J. W. Liu, D. M. Tang, Z. J. Ding. Low-energy electron inelastic mean free path and elastic mean free path of graphene. Applied Physics Letters. 118 [5] (2021) 053104 10.1063/5.0029133 | |
| T. Liu, H. Watanabe, S. Nitta, J. Wang, G. Yu, Y. Ando, Y. Honda, H. Amano, A. Tanaka, Y. Koide. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer. Applied Physics Letters. 118 [7] (2021) 072103 10.1063/5.0034584 | |
| Yuta Kainuma, Ryo Iguchi, Dwi Prananto, Vitaliy I. Vasyuchka, Burkard Hillebrands, Toshu An, Ken-ichi Uchida. Local heat emission due to unidirectional spin-wave heat conveyer effect observed by lock-in thermography. Applied Physics Letters. 118 [22] (2021) 222404 10.1063/5.0049491 | |
