HOME > 論文 > 書誌詳細Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layerT. Liu, H. Watanabe, S. Nitta, J. Wang, G. Yu, Y. Ando, Y. Honda, H. Amano, A. Tanaka, Y. Koide. Applied Physics Letters 118 [7] 072103. 2021.https://doi.org/10.1063/5.0034584 NIMS著者小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-06-10 03:00:20 +0900更新時刻: 2024-10-06 08:00:08 +0900
