Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer | SAMURAI, NIMS Researchers Directory Service

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Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

T. Liu, H. Watanabe, S. Nitta, J. Wang, G. Yu, Y. Ando, Y. Honda, H. Amano, A. Tanaka, Y. Koide.

Applied Physics Letters 118 [7] 072103. 2021.

https://doi.org/10.1063/5.0034584

NIMS author(s)

KOIDE, Yasuo

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-06-10 03:00:20 +0900Updated at: 2024-05-01 07:40:32 +0900

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