HOME > 論文 > 書誌詳細High-mobility n−-GaN drift layer grown on Si substratesJianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, SANG, Liwen, Xinqiang Wang, Weiku Ge, Bo Shen, Jianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen. Applied Physics Letters 118 [22] 222106. 2021.https://doi.org/10.1063/5.0049133 NIMS著者サン リウエンMaterials Data Repository (MDR)上の本文・データセット作成時刻: 2021-07-29 03:00:19 +0900更新時刻: 2024-03-31 11:05:00 +0900
