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論文・分野で探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2023年09月23日

795件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Sota Koike, Ryoto Yanagisawa, Masashi Kurosawa, Rajveer Jha, Naohito Tsujii, Takao Mori, Masahiro Nomura, Sota Koike, Ryoto Yanagisawa, Masashi Kurosawa, Masahiro Nomura. Effect of nanostructuring on thermoelectric performance of SiGe thin films. Japanese Journal of Applied Physics. 62 [9] (2023) 095001 10.35848/1347-4065/acf355
  • Yuichi Oshima, Takayoshi Oshima. Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3. Japanese Journal of Applied Physics. 62 [8] (2023) 080901 10.35848/1347-4065/acee3b
  • Masatomo Sumiya. Characterization of wide-gap semiconductors by photothermal deflection spectroscopy. Japanese Journal of Applied Physics. 62 [SN] (2023) SN1007 10.35848/1347-4065/ace3cf
  • Mitsunori Kurahashi. Application of hyperthermal alignment controlled O2 beam and atomic oxygen beam to surface reaction analysis. Japanese Journal of Applied Physics. 62 [SL] (2023) SL0802 10.35848/1347-4065/ace727
  • Masatomo Sumiya, Osamu Goto, Yuki Takahara, Yasutaka Imanaka, Liwen Sang, Noboru Fukuhara, Taichiro Konno, Fumimasa Horikiri, Takeshi Kimura, Akira Uedono, Hajime Fujikura, Osamu Goto, Noboru Fukuhara, Taichiro Konno, Fumimasa Horikiri, Takeshi Kimura, Akira Uedono, Hajime Fujikura. Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application. Japanese Journal of Applied Physics. 62 [8] (2023) 085501 10.35848/1347-4065/ace671
  • Kazunori Komori, Shunichi Arisawa, Minoru Tachiki, Shuuichi Ooi, Tadayuki Hayashi, Kazuhiro Endo, Tadayuki Hayashi, Kazuhiro Endo. Static magnetic field amplification in high-T c superconducting flux transformer equipped with multi-turn coil prepared using REBCO tape conductor. Japanese Journal of Applied Physics. 62 [6] (2023) 063001 10.35848/1347-4065/acd974
  • Yuki Ueda, Yuto Miyake, Akirabha Chanuntranont, Kazuki Otani, Masato Tsugawa, Daiki Saito, Shuntaro Usui, Tokuyuki Teraji, Shinobu Onoda, Takahiro Shinada, Hiroshi Kawarada, Takashi Tanii, Yuki Ueda, Yuto Miyake, Akirabha Chanuntranont, Kazuki Otani, Masato Tsugawa, Daiki Saito, Shuntaro Usui, Shinobu Onoda, Takahiro Shinada, Hiroshi Kawarada, Takashi Tanii. Detecting nuclear spins in an organosilane monolayer using nitrogen-vacancy centers for analysis of precursor self-assembly on diamond surface. Japanese Journal of Applied Physics. 62 [SG] (2023) SG1049 10.35848/1347-4065/accc91
  • Takahiro Chiba, Ryo Iguchi, Takashi Komine, Yasuhiro Hasegawa, Ken-ichi Uchida, Takahiro Chiba, Takashi Komine, Yasuhiro Hasegawa. Temperature profile of the Thomson-effect-induced heat release/absorption in junctionless single conductors. Japanese Journal of Applied Physics. 62 [3] (2023) 037001 10.35848/1347-4065/acc3e6
  • Jiro Nishinaga, Manabu Togawa, Masaya Miyahara, Kosuke Itabashi, Hironori Okumura, Masataka Imura, Yukiko Kamikawa, Shogo Ishizuka, Jiro Nishinaga, Manabu Togawa, Masaya Miyahara, Kosuke Itabashi, Hironori Okumura, Yukiko Kamikawa, Shogo Ishizuka. Annealing effects on Cu(In,Ga)Se2 solar cells irradiated by high-fluence proton beam. Japanese Journal of Applied Physics. 62 [SK] (2023) SK1014 10.35848/1347-4065/acc53b
  • Shingo Genchi, Shu Nakaharai, Takuya Iwasaki, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama, Azusa N. Hattori, Hidekazu Tanaka, Shingo Genchi, Azusa N. Hattori, Hidekazu Tanaka. Step electrical switching in VO2 on hexagonal boron nitride using confined individual metallic domains. Japanese Journal of Applied Physics. 62 [SG] (2023) SG1008 10.35848/1347-4065/acb65b
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