HOME > 論文 > 書誌詳細Influence of Ge to the formation of defects in epitaxial Mg2Sn1−x Ge x thermoelectric thin filmsKenneth Magallon Senados, Mariana S. L. Lima, Takashi Aizawa, Isao Ohkubo, Takahiro Baba, Akira Uedono, Takeaki Sakurai, Takao Mori. Japanese Journal of Applied Physics 63 [2] 02SP40. 2024.https://doi.org/10.35848/1347-4065/ad1259 Open Access IOP Publishing (Publisher) Materials Data Repository (MDR) NIMS著者相澤 俊大久保 勇男森 孝雄Materials Data Repository (MDR)上の本文・データセットMDRavailable Influence of Ge to the formation of defects in epitaxial Mg<sub>2</sub>Sn<sub>1−x </sub>Ge<sub> x </sub> thermoelectric thin films 作成時刻: 2024-01-31 03:10:16 +0900更新時刻: 2024-08-10 10:33:41 +0900