Influence of Ge to the formation of defects in epitaxial Mg<sub>2</sub>Sn<sub>1−x </sub>Ge<sub> x </sub> thermoelectric thin films | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Influence of Ge to the formation of defects in epitaxial Mg2Sn1−x Ge x thermoelectric thin films

Kenneth Magallon Senados, Mariana S. L. Lima, Takashi Aizawa, Isao Ohkubo, Takahiro Baba, Akira Uedono, Takeaki Sakurai, Takao Mori.

Japanese Journal of Applied Physics 63 [2] 02SP40. 2024.

https://doi.org/10.35848/1347-4065/ad1259

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作成時刻: 2024-01-31 03:10:16 +0900更新時刻: 2024-04-30 03:11:14 +0900

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