| 994件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Takanobu Nagayama, Kensei Terashima, Takanori Wakita, Hirokazu Fujiwara, Tetsushi Fukura, Yuko Yano, Kanta Ono, Hiroshi Kumigashira, Osamu Ogiso, Aichi Yamashita, Yoshihiko Takano, Hitoshi Mori, Hidetomo Usui, Masayuki Ochi, Kazuhiko Kuroki, Yuji Muraoka, Takayoshi Yokoya. Direct observation of double valence-band extrema and anisotropic effective masses of the thermoelectric material SnSe. Japanese Journal of Applied Physics. 57 [1] (2018) 010301 10.7567/jjap.57.010301 | |
| Shigeyuki Hirayama, Seiji Mitani, YoshiChika Otani, Shinya Kasai. Direct current modulation of spin-Hall-induced spin torque ferromagnetic resonance in platinum/permalloy bilayer thin films. Japanese Journal of Applied Physics. 57 [6] (2018) 060301 10.7567/jjap.57.060301 | |
| Jinhyeok Kim, Masaki Mizuguchi, Nobuhito Inami, Tetsuro Ueno, Shigenori Ueda, Koki Takanashi. X-ray magnetic circular dichroism and hard X-ray photoelectron spectroscopy of tetragonal Mn72Ge28 epitaxial thin film. Japanese Journal of Applied Physics. 57 [4S] (2018) 04FN10 10.7567/jjap.57.04fn10 | |
| Ploybussara Gomasang, Takumi Abe, Kenji Kawahara, Yoko Wasai, Nataliya Nabatova-Gabain, Nguyen Thanh Cuong, Hiroki Ago, Susumu Okada, Kazuyoshi Ueno. Moisture barrier properties of single-layer graphene deposited on Cu films for Cu metallization. Japanese Journal of Applied Physics. 57 [4S] (2018) 04FC08 10.7567/jjap.57.04fc08 | |
| Tsubasa Matsumoto, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Masataka Imura, Akihiro Ueda, Takao Inokuma, Norio Tokuda. Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer. Japanese Journal of Applied Physics. 57 [4S] (2018) 04FR01 10.7567/jjap.57.04fr01 | |
| Fatima Zohra Dahmani, Yuji Okamoto, Daiki Tsutsumi, Takamasa Ishigaki, Hideomi Koinuma, Saad Hamzaoui, Samir Flazi, Masatomo Sumiya. Density evaluation of remotely-supplied hydrogen radicals produced via tungsten filament method for SiCl4 reduction. Japanese Journal of Applied Physics. 57 [5] (2018) 051301 10.7567/jjap.57.051301 | |
| Nobuo Tajima, Tomoaki Kaneko, Takahiro Yamasaki, Jun Nara, Tatsuo Schimizu, Koichi Kato, Takahisa Ohno. First-principles study on C=C defects near SiC/SiO2 interface: Defect passivation by double-bond saturation. Japanese Journal of Applied Physics. 57 [4S] (2018) 04FR09 10.7567/jjap.57.04fr09 | |
| Yoichi Okamoto, Shin Watanabe, Hisashi Miyazaki, Jun Morimoto. Necessary conditions for superior thermoelectric power of Si/Au artificial superlattice thin-film. Japanese Journal of Applied Physics. 57 [3] (2018) 035801 10.7567/jjap.57.035801 | |
| Yuki Shigeoka, Tohru Tsuruoka, Tsuyoshi Hasegawa. The rate limiting process and its activation energy in the forming process of a Cu/Ta2O5/Pt gapless-type atomic switch. Japanese Journal of Applied Physics. 57 [3] (2018) 035202 10.7567/jjap.57.035202 | |
| Takashi Tsuchiya, Manikandan Jayabalan, Kinya Kawamura, Makoto Takayanagi, Tohru Higuchi, Ramasamy Jayavel, Kazuya Terabe. Neuromorphic transistor achieved by redox reaction of WO3 thin film. Japanese Journal of Applied Physics. 57 [4S] (2018) 04FK01 10.7567/jjap.57.04fk01 | |
