Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

Tsubasa Matsumoto; Hiromitsu Kato; Toshiharu Makino; Masahiko Ogura; Daisuke Takeuchi; Satoshi Yamasaki; Masataka Imura; Akihiro Ueda; Takao Inokuma; Norio Tokuda

doi:10.7567/jjap.57.04fr01

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Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

Tsubasa Matsumoto, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Masataka Imura, Akihiro Ueda, Takao Inokuma, Norio Tokuda.

Japanese Journal of Applied Physics 57 [4S] 04FR01. 2018.

https://doi.org/10.7567/jjap.57.04fr01

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作成時刻: 2018-04-20 20:58:37 +0900更新時刻: 2024-04-01 22:48:26 +0900