Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

Tsubasa Matsumoto; Hiromitsu Kato; Toshiharu Makino; Masahiko Ogura; Daisuke Takeuchi; Satoshi Yamasaki; Masataka Imura; Akihiro Ueda; Takao Inokuma; Norio Tokuda; Tsubasa Matsumoto; Hiromitsu Kato; Toshiharu Makino; Masahiko Ogura; Daisuke Takeuchi; Satoshi Yamasaki; Masataka Imura; Akihiro Ueda; Takao Inokuma; Norio Tokuda

doi:10.7567/jjap.57.04fr01

Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

Tsubasa Matsumoto, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Masataka Imura, Akihiro Ueda, Takao Inokuma, Norio Tokuda.

Japanese Journal of Applied Physics 57 [4S] 04FR01. 2018.

https://doi.org/10.7567/jjap.57.04fr01

NIMS author(s)

IMURA, Masataka

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2018-04-20 20:58:37 +0900 Updated at: 2026-10-03 05:21:51 +0900