HOME > 論文 > 書誌詳細First-principles study on C=C defects near SiC/SiO2 interface: Defect passivation by double-bond saturationNobuo Tajima, Tomoaki Kaneko, Takahiro Yamasaki, Jun Nara, Tatsuo Schimizu, Koichi Kato, Takahisa Ohno. Japanese Journal of Applied Physics 57 [4S] 04FR09. 2018.https://doi.org/10.7567/jjap.57.04fr09 NIMS著者奈良 純Materials Data Repository (MDR)上の本文・データセット作成時刻: 2018-03-31 21:08:29 +0900更新時刻: 2024-03-29 23:11:33 +0900
