HOME > Article > DetailFirst-principles study on C=C defects near SiC/SiO2 interface: Defect passivation by double-bond saturationNobuo Tajima, Tomoaki Kaneko, Takahiro Yamasaki, Jun Nara, Tatsuo Schimizu, Koichi Kato, Takahisa Ohno. Japanese Journal of Applied Physics 57 [4S] 04FR09. 2018.https://doi.org/10.7567/jjap.57.04fr09 NIMS author(s)NARA, JunOHNO, TakahisaFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2018-03-31 21:08:29 +0900 Updated at :2020-11-16 22:54:20 +0900