SAMURAI - NIMS Researchers Database

HOME > Article > Detail

First-principles study on C=C defects near SiC/SiO2 interface: Defect passivation by double-bond saturation


NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2018-03-31 21:08:29 +0900 Updated at :2020-11-16 22:54:20 +0900

    ▲ Go to the top of this page