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You can search NIMS articles by Clarivate ESI category (Materials Science, Physics, Chemistry, Engineering, Biology and etc.), title and terms from abstract.

Last updated: April 28, 2024

164 article(s) found. Sorted by publication dates. (Help)
  • Amir Zulkefli, Bablu Mukherjee, Ryoji Sahara, Ryoma Hayakawa, Takuya Iwasaki, Yutaka Wakayama, Shu Nakaharai. Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS2-FETs under Light-Assisted and Gate-Bias Tunable Operation. ACS Applied Materials & Interfaces. 13 [36] (2021) 43030-43038 10.1021/acsami.1c10054
  • Ippei Suzuki, Shoichi Kubo, Hosein Sepehri-Amin, Yukiko K. Takahashi. Dependence of the Growth Mode in Epitaxial FePt Films on Surface Free Energy. ACS Applied Materials & Interfaces. 13 [14] (2021) 16620-16627 10.1021/acsami.0c22510
  • Hitomi Yano, Nobuyuki Sakai, Yasuo Ebina, Renzhi Ma, Minoru Osada, Kenjiro Fujimoto, Takayoshi Sasaki. Construction of Multilayer Films and Superlattice- and Mosaic-like Heterostructures of 2D Metal Oxide Nanosheets via a Facile Spin-Coating Process. ACS Applied Materials & Interfaces. 13 [36] (2021) 43258-43265 10.1021/acsami.1c11463
  • Yasuhiro Domi, Hiroyuki Usui, Naoya Ieuji, Kei Nishikawa, Hiroki Sakaguchi. Lithiation/Delithiation Properties of Lithium Silicide Electrodes in Ionic-Liquid Electrolytes. ACS Applied Materials & Interfaces. 13 [3] (2021) 3816-3824 10.1021/acsami.0c17552
  • Cheol Hee Choi, Taikyu Kim, Shigenori Ueda, Yu-Shien Shiah, Hideo Hosono, Junghwan Kim, Jae Kyeong Jeong. High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film. ACS Applied Materials & Interfaces. 13 [24] (2021) 28451-28461 10.1021/acsami.1c04210
  • F. A. Vásquez, N. C. Rosero-Navarro, A. Miura, R. Jalem, Y. Goto, M. Nagao, Y. Tateyama, K. Tadanaga, J. A. Calderón. Kinetic Control of the Li0.9Mn1.6Ni0.4O4 Spinel Structure with Enhanced Electrochemical Performance. ACS Applied Materials & Interfaces. 13 [12] (2021) 14056-14067 10.1021/acsami.0c17886
  • Xiang Hua, Datong Zhang, Bumho Kim, Dongjea Seo, Kyungnam Kang, Eui-Hyeok Yang, Jiayang Hu, Xianda Chen, Haoran Liang, Kenji Watanabe, Takashi Taniguchi, James Hone, Young Duck Kim, Irving P. Herman. Stabilization of Chemical-Vapor-Deposition-Grown WS2 Monolayers at Elevated Temperature with Hexagonal Boron Nitride Encapsulation. ACS Applied Materials & Interfaces. 13 [26] (2021) 31271-31278 10.1021/acsami.1c06348
  • Dines Chandra Santra, Sanjoy Mondal, Takefumi Yoshida, Yoshikazu Ninomiya, Masayoshi Higuchi. Ru(II)-Based Metallo-Supramolecular Polymer with Tetrakis(N-methylbenzimidazolyl)bipyridine for a Durable, Nonvolatile, and Electrochromic Device Driven at 0.6 V. ACS Applied Materials & Interfaces. 13 [26] (2021) 31153-31162 10.1021/acsami.1c07275
  • Alexander D. Pogrebnjak, Richard F. Webster, Richard D. Tilley, Vladimir V. Buranich, Volodymyr I. Ivashchenko, Yoshihiko Takeda, Keiji Oyoshi, Rimma Sakenova, Katarzyna Piotrowska, Pawel Zukowski, Piotr Konarski, Anatoliy I. Kupchishin, Piotr Budzynski. Formation of Si-Rich Interfaces by Radiation-Induced Diffusion and Microsegregation in CrN/ZrN Nanolayer Coating. ACS Applied Materials & Interfaces. 13 [14] (2021) 16928-16938 10.1021/acsami.0c19451
  • Bo Gao, Randy Jalem, Yoshitaka Tateyama. First-Principles Study of Microscopic Electrochemistry at the LiCoO2 Cathode/LiNbO3 Coating/β-Li3PS4 Solid Electrolyte Interfaces in an All-Solid-State Battery. ACS Applied Materials & Interfaces. 13 [10] (2021) 11765-11773 10.1021/acsami.0c19091
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