| 43 article(s) found. Sorted by publication dates. (Help) | |
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| Jin-Hyun Kim, Takashi Onaya, Hye Ryeon Park, Yong Chan Jung, Dan N. Le, Minjong Lee, Heber Hernandez-Arriaga, Yugang Zhang, Esther H. R. Tsai, Chang-Yong Nam, Toshihide Nabatame, Si Joon Kim, Jiyoung Kim. Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition. ACS Applied Electronic Materials. 5 [9] (2023) 4726-4745 10.1021/acsaelm.3c00733 | |
| Qinqiang Zhang, Wipakorn Jevasuwan, Naoki Fukata. Morphology and Boron Doping Control of Germanium Nanowires by Ex Situ Diffusion Doping. ACS Applied Electronic Materials. 5 [8] (2023) 4674-4681 10.1021/acsaelm.3c00856 | |
| Yuhua Tsai, Jingmin Tang, Yoshiyuki Yamashita. X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001). ACS Applied Electronic Materials. 5 [7] (2023) 3843-3850 10.1021/acsaelm.3c00546 | |
| Masato Takei, Mihiro Takeuchi, Hiroshi Suga, Takatsugu Wakahara, Katsunori Wakabayashi, Susumu Okada, Kazuhito Tsukagoshi. Electromechanical Switching of a C60 Chain in a Nanogap. ACS Applied Electronic Materials. 5 [6] (2023) 3184-3189 10.1021/acsaelm.3c00253 | |
| Qingqing Sun, Chao Ma, Weipeng Li, Xiaomeng Li, Kenji Sakamoto, Xuying Liu, Akihiro Okamoto, Takeo Minari. Fully Printed Low-Voltage Field-Effect Transistor Biosensor Array for One-Drop Detection of Shewanella onedensis MR-1 Bacteria. ACS Applied Electronic Materials. 5 [5] (2023) 2558-2565 10.1021/acsaelm.3c00019 | |
| Ruma Mandal, Yuta Sasaki, Ivan Kurniawan, Jiwon Jung, Yoshio Miura, Yuya Sakuraba, Kazuhiro Hono, Yukiko K. Takahashi. Estimation of Magnetic Gilbert Damping at High Temperature: An Approach of Ferromagnetic Resonance Study. ACS Applied Electronic Materials. 4 [9] (2022) 4741-4747 10.1021/acsaelm.2c00946 | |
| Yi-Hsun Chen, Kaijian Xing, Song Liu, Luke N. Holtzman, Daniel L. Creedon, Jeffrey C. McCallum, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, James Hone, Alexander R. Hamilton, Shao-Yu Chen, Michael S. Fuhrer. P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3. ACS Applied Electronic Materials. 4 [11] (2022) 5379-5386 10.1021/acsaelm.2c01053 | |
| Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo. Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy. ACS Applied Electronic Materials. 4 [11] (2022) 5165-5170 10.1021/acsaelm.2c00999 | |
| Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, Yoshiyuki Yamashita. Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN. ACS Applied Electronic Materials. 4 [9] (2022) 4719-4723 10.1021/acsaelm.2c00912 | |
| Alok Ranjan, Nagarajan Raghavan, Matthew Holwill, Kenji Watanabe, Takashi Taniguchi, Kostya S. Novoselov, Kin Leong Pey, Sean J. O’Shea. Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride. ACS Applied Electronic Materials. 3 [8] (2021) 3547-3554 10.1021/acsaelm.1c00469 | |
