| 36 article(s) found. Sorted by publication dates. (Help) | |
|---|
| Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo. Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy. ACS Applied Electronic Materials. 4 [11] (2022) 5165-5170 10.1021/acsaelm.2c00999 | |
| Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, Yoshiyuki Yamashita. Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN. ACS Applied Electronic Materials. 4 [9] (2022) 4719-4723 10.1021/acsaelm.2c00912 | |
| Alok Ranjan, Nagarajan Raghavan, Matthew Holwill, Kenji Watanabe, Takashi Taniguchi, Kostya S. Novoselov, Kin Leong Pey, Sean J. O’Shea. Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride. ACS Applied Electronic Materials. 3 [8] (2021) 3547-3554 10.1021/acsaelm.1c00469 | |
| Shingo Genchi, Ai I. Osaka, Azusa N. Hattori, Kenji Watanabe, Takashi Taniguchi, Hidekazu Tanaka. Prominent Verway Transition of Fe3O4 Thin Films Grown on Transferable Hexagonal Boron Nitride. ACS Applied Electronic Materials. 3 [11] (2021) 5031-5036 10.1021/acsaelm.1c00803 | |
| Benjamin Meunier, Eugénie Martinez, Raquel Rodriguez-Lamas, Dolors Pla, Monica Burriel, Carmen Jimenez, Yoshiyuki Yamashita, Olivier Renault. Unraveling the Resistive Switching Mechanisms in LaMnO3+δ-Based Memristive Devices by Operando Hard X-ray Photoemission Measurements. ACS Applied Electronic Materials. 3 [12] (2021) 5555-5562 10.1021/acsaelm.1c00968 | |
| Barun Kumar Barman, Ørjan Sele Handegård, David Hernández-Pinilla, Satish Laxman Shinde, Tadaaki Nagao. Transparent Hard Coatings with SiON-Encapsulated N-Doped Carbon Dots for Complete UV Blocking and White Light Emission. ACS Applied Electronic Materials. 3 [9] (2021) 3761-3773 10.1021/acsaelm.1c00257 | |
| Naoomi Yamada, Mari Mizutani, Kenta Matsuura, Masataka Imura, Hidenobu Murata, Junjun Jia, Fumio Kawamura. Band Gap-Tunable (Mg, Zn)SnN2 Earth-Abundant Alloys with a Wurtzite Structure. ACS Applied Electronic Materials. 3 [11] (2021) 4934-4942 10.1021/acsaelm.1c00754 | |
| Naoomi Yamada, Kenta Matsuura, Masataka Imura, Hidenobu Murata, Fumio Kawamura. Composition-Dependent Properties of Wurtzite-Type Mg1+xSn1–xN2 Epitaxially Grown on GaN(001) Templates. ACS Applied Electronic Materials. 3 [3] (2021) 1341-1349 10.1021/acsaelm.0c01115 | |
| Yuki Tashiro, Takao Shimizu, Takanori Mimura, Hiroshi Funakubo. Comprehensive Study on the Kinetic Formation of the Orthorhombic Ferroelectric Phase in Epitaxial Y-Doped Ferroelectric HfO2 Thin Films. ACS Applied Electronic Materials. 3 [7] (2021) 3123-3130 10.1021/acsaelm.1c00342 | |
| Jingmin Tang, Yoshiyuki Yamashita. Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN. ACS Applied Electronic Materials. 3 [10] (2021) 4618-4622 10.1021/acsaelm.1c00766 | |
