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Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN

著者Jingmin Tang, Yoshiyuki Yamashita.
掲載誌名ACS Applied Electronic Materials 3 [10] 4618-4622
ISSN: 26376113
出版社American Chemical Society (ACS)
発表年2021
言語English
DOIhttps://doi.org/10.1021/acsaelm.1c00766
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