| 1557件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Hayato Yonemoto, Rui Ochiai, Soh Komatsu, Masashi Akabori, Shinjiro Hara. Substrate materials dependence of magnetic domain formation in CoFe nanolayer electrode patterns. Japanese Journal of Applied Physics. 65 [6] (2026) 06SP02 10.35848/1347-4065/ae4635 | |
| Masataka Imura, Takanobu Hiroto, Takaaki Mano, Yuri Itokazu, Masafumi Jo. Analysis of In
x
Ga1−
x
N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control. Journal of Applied Physics. 139 [11] (2026) 115703 10.1063/5.0307826 Open Access | |
| Maki Nishimura, Wataru Namiki, Daiki Nishioka, Sota Hikasa, Ryo Iguchi, Kazuya Terabe, Takashi Tsuchiya. High-accuracy prediction for the NARMA task achieved by eight detectors in nonlinearly interfered spin waves-based physical reservoir computing. Japanese Journal of Applied Physics. 65 [5] (2026) 05SP05 10.35848/1347-4065/ae43f6 | |
| Tongshuang Huang, Shinji Isogami, Takanori Shirokura, Md. Mahmuldul Hasan, Mikiko Saito, Jun Uzuhashi, Tadakatsu Ohkubo, Shinya Kasai, Shigeki Nakagawa, Yota Takamura. Spin–orbit torque-induced magnetization switching in electrochemically deposited CoPt oriented polycrystalline film. Journal of Applied Physics. 139 [9] (2026) 093903 10.1063/5.0323775 | |
| Yuichi Oshima, Takayoshi Oshima, Shiyu Xiao, Kazuto Murakami, Katsuhiro Imai, Takahiro Tomita. Halide vapor phase epitaxy of a thick
c
-plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template. Journal of Applied Physics. 139 [7] (2026) 075302 10.1063/5.0319104 Open Access | |
| Takayoshi Oshima. Mapping primary crystallographic planes in
β
-Ga
2
O
3
based on a pseudo-cubic oxygen sublattice. Japanese Journal of Applied Physics. 65 [3] (2026) 038003 10.35848/1347-4065/ae42ac Open Access | |
| Hironori Okumura, Satoshi Iida, Shigeki Hirose, Kosuke Itabashi, Manabu Togawa, Masaya Miyahara, Jiro Nishinaga, Masataka Imura, Keigo Urasaki, Tadaaki Isobe. GaN radiation detectors with low-gain avalanche diode structure. Japanese Journal of Applied Physics. 65 [1] (2026) 016501 10.35848/1347-4065/ae2dad | |
| Akihiro Ohtake, Jun Nara, Yoshiki Sakuma. Epitaxial configuration of unidirectionally aligned MoS2 monolayer on sapphire. Journal of Applied Physics. 139 [2] (2026) 024303 10.1063/5.0303598 Open Access | |
| Masato Oda, Tsuyoshi Miyazaki. Stabilities and electronic states of Mg layers in the polarity inversion layer at GaN(0001) interfaces. Japanese Journal of Applied Physics. 65 [1] (2026) 011001 10.35848/1347-4065/ae2a87 | |
| Ryusuke Seino, Hidehiro Asai, Ichiro Takakuwa, Shutaro Asanuma, Yoshihiro Nemoto, Yuki Nishimiya, Keishi Nishio, Makoto Minohara. Design of oxide-based tunnel FETs using amorphous IGZO and p-type oxide semiconductors. Journal of Applied Physics. 138 [10] (2025) 105306 10.1063/5.0271651 | |
