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最終更新時刻: 2021-07-17 03:00:18 +0900

7606 article(s) found. Sorted by publication dates. (Help)
  • Shinya Hosokawa, Jens Rüdiger Stellhorn, Yohei Onodera, Shinji Kohara, Hiroo Tajiri, Eisuke Magome, László Pusztai, Kazutaka Ikeda, Toshiya Otomo, Milos Krbal, Tomas Wagner. Local- and Intermediate-Range Atomic Order in Ga2Ge3Se9 Glass: Complementary Use of X-Rays and Neutrons. Proceedings of the 3rd J-PARC Symposium (J-PARC2019). 2021
  • Yoshimitsu Hishinuma, Hiroyasu Taniguchi, Taiji Mizuta, Yasunari Mizuta, Akihiro Kikuchi. Investigation of the Cu based binary alloys and the internal matrix reinforcement bronze processed Nb3Sn wires. Journal of Physics: Conference Series. 2021, 012019-1-012019-6
  • Muhammad Hilmi Johari, Mohamad Shukri Sirat, Mohd Ambri Mohamed, Yutaka Wakayama, Abdul Rahman Mohmad. Effects of post-annealing on MoS2 thin films synthesized by multi-step chemical vapor deposition. Nanomaterials and Nanotechnology. 2021, 1-7
  • Koshiro Akiyama, Tatsuya Mori, Tomoyuki Terai, Yoko Akiyama, Hidehiko Okada, Noriyuki Hirota, Tsuyoshi Yamaji, Hideki Matsuura, Seitoku Namba, Tomokazu Sekine, Fumihito Mishima, Shigehiro Nishijima. Removal of Iron Oxide Scale From Boiler Feed-Water in Thermal Power Plant by Magnetic Separation-Separation Conditions of Oxygenated Treatment Scale. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY. 2021, 3700204-1-3700204-4
  • Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications. ECS Transactions. 2021, 147-150
  • Ryo Matsumura, Naoki Fukata. Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing. ECS Transactions. 2021, 141-146
  • R Ueji, Y Kimura, K Ushioda, T Ohmura, T Inoue, A Shibata. Orientation dependence of transformation induced plasticity in high carbon bainitic steel. IOP Conference Series: Materials Science and Engineering. 2021, 012022-1-012022-6
  • ラハマト ハディ サプトロ, 松村 亮, 深田 直樹. Sb 添加Ge 縦型pn ダイオードの電気特性に及ぼす基板加熱堆積の効果. 電子デバイス界面テクノロジー研究会 –材料・プロセス・デバイス特性の物理–プロシーディング集. 2021, 133-136
  • MASUYAMA, Haruki, MATSUNAGA, Tetsuya, TODA, Yoshiaki, 伊藤勉, 下条雅幸, MITARAI, Yoko. Microstructure factor of creep behavior in near-α Ti alloy. MATERIALS SCIENCE FORUM. 2021, 1882-1889
  • 松村 亮, 深田 直樹. 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成⻑. 電子デバイス界面テクノロジー研究会 –材料・プロセス・デバイス特性の物理–プロシーディング集. 2021, 63-66
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