- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
[論文] | [書籍] | [会議録] | [口頭発表] | [その他の文献] | [公開特許出願]
論文 TSV
2026
- MOHAMMAD, Monish, HINO, Koki, SASAMA, Yosuke, Masato Urakami, Takehiro Ota, SAKAMOTO, Kenji, Kenichiro Takakura, YAMAGUCHI, Takahide, Masato Urakami, Takehiro Ota, Kenichiro Takakura. Transfer of Freestanding Fluoropolymer Films for Advanced Semiconductor Devices. ACS Applied Materials & Interfaces. 18 [35] (2026) 47786-47796 10.1021/acsami.6c05045 Open Access
- HINO, Koki, MOHAMMAD, Monish, SASAMA, Yosuke, SAKAMOTO, Kenji, YAMAGUCHI, Takahide. Effective lateral isolation for hydrogen-terminated diamond field-effect transistors via nitrogen ion implantation. Applied Physics Letters. 128 [21] (2026) 213503 10.1063/5.0323938
2024
- Yosuke Sasama, Takuya Iwasaki, Mohammad Monish, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide. Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator. Applied Physics Letters. 125 [9] (2024) 092103 10.1063/5.0224192 Open Access
書籍 TSV
会議録 TSV
口頭発表 TSV
2026
- YAMAGUCHI, Takahide, HINO, Koki, SASAMA, Yosuke, MOHAMMAD, Monish, KIKKAWA, Jun, アマリア ワルダ, MIYAZAKI, Tsuyoshi. Highly conductive interface between single-crystalline α-MoO3 and hydrogen-terminated diamond. Hasselt Diamond Workshop 2026 - SBDD XXX. 2026
2025
- YAMAGUCHI, Takahide, HINO, Koki, MOHAMMAD, Monish, SASAMA, Yosuke. New device architectures for high-mobility hydrogen-terminated diamond field-effect transistors. 18th International Conference on New Diamond and Nano Carbons (NDNC2025). 2025
- MOHAMMAD, Monish, HINO, Koki, SASAMA, Yosuke, 浦上 真聡, 太田 岳宏, 光永 尚人, 坂井 晴香, SAKAMOTO, Kenji, 髙倉 健一郎, YAMAGUCHI, Takahide. Low Interface-State-Density Gate Stacks for High-Mobility Hydrogen-Terminated Diamond FETs: A Scalable Fabrication Route. 18th International Conference on New Diamond and Nano Carbons (NDNC 2025). 2025
- SASAMA, Yosuke, IWASAKI, Takuya, MOHAMMAD, Monish, IMURA, Masataka, WATANABE, Kenji, TANIGUCHI, Takashi, YAMAGUCHI, Takahide. High-mobility diamond field-effect transistors utilizing a hexagonal boron nitride gate insulator. The 2nd International Conference on Advanced Functional Materials (ICAFM 2025 KATHMANDU). 2025 招待講演
- MOHAMMAD, Monish, HINO, Koki, SASAMA, Yosuke, 浦上 真聡, 太田 岳宏, 光永 尚人, 坂井 晴香, SAKAMOTO, Kenji, 髙倉 健一郎, YAMAGUCHI, Takahide. Enabling Scalable Fabrication of High-Mobility Hydrogen-Terminated Diamond FETs. Hasselt Diamond Workshop 2025 - SBDD XXIX. 2025
- HINO, Koki, SASAMA, Yosuke, MOHAMMAD, Monish, YAMAGUCHI, Takahide. Electrical conduction at the interface of single crystal α-MoO3/hydrogen-terminated diamond heterostructure. Hasselt Diamond Workshop 2025 - SBDD XXIX. 2025
2024
- 日野 晃貴, 笹間 陽介, モハマド モニッシュ, 山口 尚秀. α-MoO3/水素終端ダイヤモンドヘテロ構造の転写法による作製. 第38回ダイヤモンドシンポジウム. 2024