| 49714件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
|---|
| Alexandra Evstigneeva, Rasdip Singh, Michael Trenary, Shigeki Otani. Reaction of O2 with the boron-terminated TaB2 (0001) surface. Surface Science. 542 [3] (2003) 221-229 10.1016/s0039-6028(03)00978-6 | |
| Jin Nakamura, Shin-ya Nasubida, Eiki Kabasawa, Hisashi Yamazaki, Nobuyoshi Yamada, Kazuhiko Kuroki, Masamitsu Watanabe, Tamio Oguchi, Sergey Lee, Ayako Yamamoto, Setsuko Tajima, Yuji Umeda, Shin Minakawa, Noriaki Kimura, Haruyoshi Aoki, Shigeki Otani, Shik Shin, Thomas A. Callcott, David L. Ederer, Jonathan D. Denlinger, Rupert C. C. Perera. Electronic structure of B2pσandpπstates inMgB2,AlB2,andZrB2single crystals. Physical Review B. 68 [6] (2003) 064515 10.1103/physrevb.68.064515 | |
| Shigeru Nishio, Masato Kakihana, Hiromi Eba, Kenji Sakurai. “Doughnut-shaped” Coloration of V2O5 upon Laser Irradiation: Another Evidence of Visible Light Photochromism of V2O5. Japanese Journal of Applied Physics. 42 [Part 1, No. 9A] (2003) 5670-5671 10.1143/jjap.42.5670 | |
| M. Fujinami, T. Miyagoe, T. Sawada, T. Akahane. Improved depth profiling with slow positrons of ion implantation-induced damages in silicon. Journal of Applied Physics. 94 [7] (2003) 4382-4388 10.1063/1.1606855 | |
| YoungZu, Yoo, CHIKYOW, Toyohiro, Masashi Kawasaki, Takeyohi Onuma, ShigeFusa Chichibu, 鯉沼秀臣. Heteroepitaxy of Hexagonal ZnS Thin Films Directly on Si (111). JAPANESE JOURNAL OF APPLIED PHYSICS. 42 [11] (2003) 7029-7032 | |
| Y. Wakayama, L.V. Sokolov, N. Zakharov, P. Werner, U. Gösele. Precise control of size and density of self-assembled Ge dot on Si(100) by carbon-induced strain-engineering. Applied Surface Science. 216 [1-4] (2003) 419-423 10.1016/s0169-4332(03)00385-4 | |
| Yoshiyuki Sato, Isao Sakaguchi, Mineharu Suzuki, Hajime Haneda. Development of combinatorial ion implantation system. Japanese Journal of Applied Physics. 42 [Part 1, No. 9A] (2003) 5867-5868 10.1143/jjap.42.5867 | |
| M. Yoshitake, S. Bera, Y. Yamauchi. AES and LEED study of well-ordered oxide film grown on Cu-9at%Al(111). Surface and Interface Analysis. 35 [10] (2003) 824-828 10.1002/sia.1610 | |
| Y. Wakayama, L. V. Sokolov, N. Zakharov, P. Werner, U. Gösele. Stabilization and fine control of Ge dot structure on Si(100) by C cover layer. Journal of Applied Physics. 93 [1] (2003) 765-767 10.1063/1.1527205 | |
| Y. Wakayama, T. Kubota, H. Suzuki, T. Kamikado, S. Mashiko. Molecular Coulomb islands for single-electron tunneling in SiO2/molecular layer/SiO2 multilayers on Si(100). Journal of Applied Physics. 94 [7] (2003) 4711-4713 10.1063/1.1605249 | |
