HOME > 論文 > 書誌詳細Stabilization and fine control of Ge dot structure on Si(100) by C cover layer(C層によるSi(100)基板上Geドット構造の安定化と精密制御)Y. Wakayama, L. V. Sokolov, N. Zakharov, P. Werner, U. Gösele. Journal of Applied Physics 93 [1] 765-767. 2003.https://doi.org/10.1063/1.1527205 NIMS著者若山 裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 11:59:12 +0900更新時刻: 2024-03-30 02:56:15 +0900