Precise control of size and density of self-assembled Ge dot on Si(100) by carbon-induced strain-engineering
(C層を用いた歪制御によるSi(100)基板上Geドットのサイズと密度の精密制御)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 11:59:13 +0900 Updated at: 2026-11-04 06:19:06 +0900