| 49734 article(s) found. Sorted by publication dates. (Help) | |
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| Subhajit Sinha, Pratap Chandra Adak, R. S. Surya Kanthi, Bheema Lingam Chittari, L. D. Varma Sangani, Kenji Watanabe, Takashi Taniguchi, Jeil Jung, Mandar M. Deshmukh. Bulk valley transport and Berry curvature spreading at the edge of flat bands. Nature Communications. 11 [1] (2020) 10.1038/s41467-020-19284-w Open Access | |
| Zhiming Zhang, Yimeng Wang, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Emanuel Tutuc, Brian J. LeRoy. Flat bands in twisted bilayer transition metal dichalcogenides. Nature Physics. 16 [11] (2020) 1093-1096 10.1038/s41567-020-0958-x | |
| T. P. Lyons, D. Gillard, A. Molina-Sánchez, A. Misra, F. Withers, P. S. Keatley, A. Kozikov, T. Taniguchi, K. Watanabe, K. S. Novoselov, J. Fernández-Rossier, A. I. Tartakovskii. Interplay between spin proximity effect and charge-dependent exciton dynamics in MoSe2/CrBr3 van der Waals heterostructures. Nature Communications. 11 [1] (2020) 10.1038/s41467-020-19816-4 Open Access | |
| Yang Xu, Song Liu, Daniel A. Rhodes, Kenji Watanabe, Takashi Taniguchi, James Hone, Veit Elser, Kin Fai Mak, Jie Shan. Correlated insulating states at fractional fillings of moiré superlattices. Nature. 587 [7833] (2020) 214-218 10.1038/s41586-020-2868-6 | |
| Long Zhang, Zhe Zhang, Fengcheng Wu, Danqing Wang, Rahul Gogna, Shaocong Hou, Kenji Watanabe, Takashi Taniguchi, Krishnamurthy Kulkarni, Thomas Kuo, Stephen R. Forrest, Hui Deng. Twist-angle dependence of moiré excitons in WS2/MoSe2 heterobilayers. Nature Communications. 11 [1] (2020) 10.1038/s41467-020-19466-6 Open Access | |
| Keigo Nakamura, Naoka Nagamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality. ACS Applied Materials & Interfaces. 12 [46] (2020) 51598-51606 10.1021/acsami.0c13233 Open Access | |
| Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio. Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage. Small. 16 [47] (2020) 2004907 10.1002/smll.202004907 | |
| H. Kawamoto, N. Higashitarumizu, N. Nagamura, M. Nakamura, K. Shimamura, N. Ohashi, K. Nagashio. Micrometer-scale monolayer SnS growth by physical vapor deposition. Nanoscale. 12 [45] (2020) 23274-23281 10.1039/d0nr06022d | |
| Sakiko Kawanishi, Issei Suzuki, Takeo Ohsawa, Naoki Ohashi, Hiroyuki Shibata, Takahisa Omata. Growth of Large Single Crystals of n-Type SnS from Halogen-Added Sn Flux. Crystal Growth & Design. 20 [9] (2020) 5931-5939 10.1021/acs.cgd.0c00617 | |
| Yunxiang Li, Shengyao Wang, Xu-sheng Wang, Yu He, Qi Wang, Yingbo Li, Mengli Li, Gaoliang Yang, Jundong Yi, Huiwen Lin, Dekang Huang, Lan Li, Hao Chen, Jinhua Ye. Facile Top-Down Strategy for Direct Metal Atomization and Coordination Achieving a High Turnover Number in CO2 Photoreduction. Journal of the American Chemical Society. 142 [45] (2020) 19259-19267 10.1021/jacs.0c09060 | |
